2N7002PV NXP Semiconductors, 2N7002PV Datasheet - Page 4
![Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology](/photos/41/52/415245/sot666_3d_sml.gif)
2N7002PV
Manufacturer Part Number
2N7002PV
Description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet
1.2N7002PV.pdf
(16 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N7002PV
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Company:
Part Number:
2N7002PV,115
Manufacturer:
NXP
Quantity:
96 000
Company:
Part Number:
2N7002PVЈ¬115
Manufacturer:
NXP
Quantity:
4 000
NXP Semiconductors
6. Thermal characteristics
2N7002PV
Product data sheet
Fig 3.
(A)
I
10
10
10
(1) t
(2) t
(3) t
(4) DC; T
(5) t
(6) DC; T
D
10
−1
−2
−3
1
10
I
Per transistor: Safe operating area; junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
−1
DM
p
p
p
p
= 100 μs
= 1 ms
= 10 ms
= 100 ms
= single pulse
sp
amb
= 25 °C
= 25 °C; drain mounting pad 1 cm
Table 6.
[1]
[2]
Symbol
Per transistor
R
R
Per device
R
th(j-a)
th(j-sp)
th(j-a)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
All information provided in this document is subject to legal disclaimers.
1
2
Rev. 1 — 5 August 2010
Conditions
in free air
in free air
60 V, 350 mA N-channel Trench MOSFET
10
[1]
[2]
[1]
V
DS
Min
-
-
-
-
(V)
2N7002PV
Typ
330
280
-
-
© NXP B.V. 2010. All rights reserved.
017aaa063
(1)
(2)
(3)
(4)
(5)
(6)
Max
380
320
115
250
10
2
.
2
Unit
K/W
K/W
K/W
K/W
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