PMFPB6532UP NXP Semiconductors, PMFPB6532UP Datasheet
PMFPB6532UP
Related parts for PMFPB6532UP
PMFPB6532UP Summary of contents
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... PMFPB6532UP 320 mV V combination Rev. 1 — 9 March 2011 1. Product profile 1.1 General description Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low V Schottky diode combined in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package. ...
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... Pin Ordering information Table 3. Type number PMFPB6532UP HUSON6 plastic thermal enhanced ultra thin small outline package; 4. Marking Table 4. Type number PMFPB6532UP PMFPB6532UP Product data sheet 320 mV V Quick reference data …continued Parameter Conditions ≤ 133 °C ...
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... T amb = 25 ° junction temperature ambient temperature storage temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 March 2011 PMFPB6532UP P-channel MOSFET-Schottky combination F Min - - [ ° 100 ° ≤ 10 μs p [2] ...
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... PMFPB6532UP Product data sheet 320 mV V 017aaa001 75 125 175 T (°C) amb Fig −1 2 All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 March 2011 PMFPB6532UP P-channel MOSFET-Schottky combination F 120 I der (%) −75 − × ------------------- - I = ...
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... All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 March 2011 PMFPB6532UP P-channel MOSFET-Schottky combination F Min Typ [ [ ...
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... PMFPB6532UP Product data sheet 320 mV V P-channel MOSFET-Schottky combination F − − All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 March 2011 PMFPB6532UP 017aaa068 (s) p 017aaa082 (s) p © NXP B.V. 2011. All rights reserved. ...
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... forward V DS transconductance All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 March 2011 PMFPB6532UP P-channel MOSFET-Schottky combination Min = −250 μA; V − −250 μA; V −0 − °C ...
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... I F reverse current diode capacitance V R ≤ 300 μs; δ ≤ 0.01. p All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 March 2011 PMFPB6532UP P-channel MOSFET-Schottky combination F Min = −3 − −4 − − Ω; ...
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... DS Fig 9. 017aaa071 (2) (3) (4) (5) (6) −4.0 −5.0 −6.0 I (A) D Fig 11. MOSFET transistor: Drain-source on-state All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 March 2011 PMFPB6532UP P-channel MOSFET-Schottky combination F −3 − (A) (1) (2) −4 −10 −5 −10 −0.4 −0.8 0 ° − ...
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... C (pF) 10 120 180 T (°C) amb (1) C (2) C (3) C Fig 15. MOSFET transistor: Input, output and reverse All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 March 2011 PMFPB6532UP P-channel MOSFET-Schottky combination F − 120 R DSon ----------------------------- DSon 25°C on-state resistance as a function of ambient temperature ...
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... Q (nC °C amb Fig 17. MOSFET transistor: Gate charge waveform −6 (A) −4.0 (1) −2.0 0.0 −0.4 −0.8 0.0 All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 March 2011 PMFPB6532UP P-channel MOSFET-Schottky combination GS(pl) V GS(th GS1 GS2 ...
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... V (V) F Fig 20. Schottky diode: Reverse current as a function 017aaa086 (V) R Fig 22. Schottky diode: Average forward current as a All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 March 2011 PMFPB6532UP P-channel MOSFET-Schottky combination (A) −1 10 (1) −2 10 (2) −3 ...
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... Fig 23. Duty cycle definition PMFPB6532UP Product data sheet 320 mV V P-channel MOSFET-Schottky combination F P duty cycle δ All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 March 2011 PMFPB6532UP 006aaa812 © NXP B.V. 2011. All rights reserved ...
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... 0.77 2.1 1.1 0.54 0.3 0.65 0.1 0.57 1.9 0.9 0.44 0.2 References JEDEC JEITA - - - All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 March 2011 PMFPB6532UP P-channel MOSFET-Schottky combination detail (8× 0.05 0.05 European projection SOT1118 sot1118_po Issue date 10-08-03 10-08-16 © NXP B.V. 2011. All rights reserved. ...
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... Reflow soldering is the only recommended soldering method. All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 March 2011 PMFPB6532UP P-channel MOSFET-Schottky combination F 0.3 0.4 (6×) (6×) 1.05 1.15 (2×) (2×) Dimensions in mm © NXP B.V. 2011. All rights reserved. ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date PMFPB6532UP v.1 20110309 PMFPB6532UP Product data sheet 320 mV V P-channel MOSFET-Schottky combination F Data sheet status Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 March 2011 PMFPB6532UP ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 March 2011 PMFPB6532UP P-channel MOSFET-Schottky combination F © NXP B.V. 2011. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 March 2011 PMFPB6532UP P-channel MOSFET-Schottky combination F © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMFPB6532UP All rights reserved. Date of release: 9 March 2011 Document identifier: PMFPB6532UP ...