PMFPB6532UP NXP Semiconductors, PMFPB6532UP Datasheet - Page 15
PMFPB6532UP
Manufacturer Part Number
PMFPB6532UP
Description
Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin SOT1118 Surface-Mounted Dev
Manufacturer
NXP Semiconductors
Datasheet
1.PMFPB6532UP.pdf
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NXP Semiconductors
10. Soldering
PMFPB6532UP
Product data sheet
Fig 25. Reflow soldering footprint SOT1118
2.25
0.875
0.875
Reflow soldering is the only recommended soldering method.
All information provided in this document is subject to legal disclaimers.
0.35
0.45
(6×)
(6×)
20 V, 3.5 A / 320 mV V
Rev. 1 — 9 March 2011
0.65
0.49
2.1
0.49
0.65
0.72
0.82
(2×)
(2×)
F
P-channel MOSFET-Schottky combination
1.05
(6×)
(2×)
0.3
1.15
(6×)
(2×)
0.4
PMFPB6532UP
Dimensions in mm
© NXP B.V. 2011. All rights reserved.
solder lands
solder paste
solder resist
occupied area
sot1118_fr
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