PSMN5R0-100ES NXP Semiconductors, PSMN5R0-100ES Datasheet
PSMN5R0-100ES
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PSMN5R0-100ES Summary of contents
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... PSMN5R0-100ES N-channel 100 V 5 mΩ standard level MOSFET in I2PAK Rev. 3 — 26 September 2011 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...
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... N-channel 100 V 5 mΩ standard level MOSFET in I2PAK Simplified outline SOT226 (I2PAK) Description plastic single-ended package (I2PAK); TO-262 All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 September 2011 PSMN5R0-100ES Graphic symbol mbb076 3 Version SOT226 © NXP B.V. 2011. All rights reserved. ...
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... GS 003aaf735 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 September 2011 PSMN5R0-100ES Min - = 20 kΩ -20 Figure 1 - [1] Figure 1 - Figure -55 - 120 A ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN5R0-100ES Product data sheet N-channel 100 V 5 mΩ standard level MOSFET in I2PAK All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 September 2011 PSMN5R0-100ES 003aaf734 =10 μ 100 μ 100 ms ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN5R0-100ES Product data sheet N-channel 100 V 5 mΩ standard level MOSFET in I2PAK Conditions see Figure 4 Vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 September 2011 PSMN5R0-100ES Min Typ Max - 0.22 0. 003aaf733 t ...
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... MHz °C; see Figure 0.67 Ω 4.7 Ω G(ext All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 September 2011 PSMN5R0-100ES Min Typ Max 100 - - 4 0.08 10 ...
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... V (V) GS Fig 8. Output characteristics: drain current as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 September 2011 PSMN5R0-100ES Min Typ Max - 0.8 1 235 - 003aaf724 = 175 ° ° ...
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... V (V) GS Fig 10. Gate-source threshold voltage as a function of 03aa35 typ max (V) GS Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 September 2011 PSMN5R0-100ES 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature 2 ...
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... I (A) D Fig 14. Gate charge waveform definitions 003aaf729 150 200 Q (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 September 2011 PSMN5R0-100ES GS(pl) V GS(th GS1 GS2 ...
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... N-channel 100 V 5 mΩ standard level MOSFET in I2PAK 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 September 2011 PSMN5R0-100ES 003aaf731 = 25 ° C 0.9 1.2 V (V) SD © NXP B.V. 2011. All rights reserved ...
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... max 0.7 1.6 10.3 11 2.54 0.4 1.2 9.7 REFERENCES JEDEC JEITA TO-262 All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 September 2011 PSMN5R0-100ES mounting base 15.0 3.30 2.6 13.5 2.79 2.2 EUROPEAN PROJECTION SOT226 ISSUE DATE 06-02-14 09-08-25 © NXP B.V. 2011. All rights reserved. ...
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... N-channel 100 V 5 mΩ standard level MOSFET in I2PAK Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 September 2011 PSMN5R0-100ES Supersedes PSMN5R0-100ES v.2 PSMN5R0-100ES v.1 © NXP B.V. 2011. All rights reserved ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 September 2011 PSMN5R0-100ES © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 September 2011 PSMN5R0-100ES Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 26 September 2011 Document identifier: PSMN5R0-100ES ...