PSMN5R0-100ES NXP Semiconductors, PSMN5R0-100ES Datasheet - Page 9

• Manufacturer Part Number: PSMN5R0-100ES
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN5R0-100ES
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
V
R
(mΩ)
(V)
GS
DSon
10
7
6
5
4
3
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
V
30
DS
50
= 20V
60
80V
50V
V
GS
100
(V) =5.5
90
10.0
6.0
8.0
20.0
150
120
All information provided in this document is subject to legal disclaimers.
15.0
Q
003aaf732
003aaf729
G
I
D
(nC)
(A)
Rev. 3 — 26 September 2011
150
200
N-channel 100 V 5 mΩ standard level MOSFET in I2PAK
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
10
5
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
PSMN5R0-100ES
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
© NXP B.V. 2011. All rights reserved.
DS
003aaf730
003aaa508
(V)
C
C
C
oss
rss
iss
10
2
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