PSMN5R0-100ES NXP Semiconductors, PSMN5R0-100ES Datasheet - Page 5

PSMN5R0-100ES

Manufacturer Part Number
PSMN5R0-100ES
Description
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN5R0-100ES
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
10
10
10
(K/W)
th(j-mb)
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
0.05
d = 0.5
0.02
Thermal characteristics
0.1
0.2
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
single shot
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 3 — 26 September 2011
N-channel 100 V 5 mΩ standard level MOSFET in I2PAK
10
-3
Conditions
see
Vertical in free air
Figure 4
10
-2
PSMN5R0-100ES
Min
-
-
10
P
-1
Typ
0.22
60
t
p
T
t
© NXP B.V. 2011. All rights reserved.
p
(s)
003aaf733
 =
-
Max
0.44
t
T
p
t
1
Unit
K/W
K/W
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