PSMN7R0-100BS NXP Semiconductors, PSMN7R0-100BS Datasheet
PSMN7R0-100BS
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PSMN7R0-100BS Summary of contents
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... PSMN7R0-100BS N-channel 100V 6.8 mΩ standard level MOSFET in D2PAK. Rev. 2 — 2 March 2012 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ...
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... T pulsed ° j(init 100 V; unclamped; R sup All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN7R0-100BS Graphic symbol SOT404 (D2PAK kΩ GS Figure 1 [1] Figure °C; see Figure ° ...
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... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature DC 10 All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN7R0-100BS 0 50 100 150 T 003aad559 = 10 μ 100 μ 100 ...
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... Objective data sheet N-channel 100V 6.8 mΩ standard level MOSFET in D2PAK. Conditions see Figure 4 Minimum footprint; mounted on a printed circuit board - All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN7R0-100BS Min Typ Max Unit - 0.3 0.56 K K/W 003aad560 t ...
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... Figure 15; see Figure see Figure 15; DS see Figure MHz °C; see Figure 16 j All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN7R0-100BS Min Typ Max 100 - - 4 ...
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... Figure /dt = 100 A/µ 003a a d562 6 5.5 5 4 (V) DS Fig 6. All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN7R0-100BS Min Typ = 34.6 - 45.6 - 103.9 - 49 167 12000 C (pF) 10000 8000 ...
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... I (A) D Fig 8. 003a a d571 (V) GS Fig 10. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN7R0-100BS ( 175 ° Transfer characteristics: drain current as a function of gate-source voltage; typical values ...
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... GS Fig 12. Normalized drain-source on-state resistance 003a a d563 100 I (A) D Fig 14. Gate-source voltage as a function of gate All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN7R0-100BS 3.2 a 2.4 1.6 0 factor as a function of junction temperature ( ...
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... Fig 16. Input, output and reverse transfer capacitances 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN7R0-100BS function of drain-source voltage; typical values 003a a d570 25 °C 0.9 1.2 ...
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... max. 1.60 10.30 2.90 11 2.54 1.20 9.70 2.10 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN7R0-100BS mounting base 15.80 2.60 14.80 2.20 EUROPEAN PROJECTION SOT404 ISSUE DATE 05-02-11 06-03-16 © NXP B.V. 2012. All rights reserved ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN7R0-100BS v.2 20120302 • Modifications: Various changes to content. PSMN7R0-100BS v.1 20111025 PSMN7R0-100BS Objective data sheet N-channel 100V 6.8 mΩ standard level MOSFET in D2PAK. Data sheet status Change notice Objective data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN7R0-100BS © NXP B.V. 2012. All rights reserved ...
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... Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMediaand UCODE— are trademarks of NXP B.V. HD RadioandHD Radiologo — are trademarks of iBiquity Digital Corporation. to:salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN7R0-100BS © NXP B.V. 2012. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 2 March 2012 Document identifier: PSMN7R0-100BS ...