PSMN7R0-100BS NXP Semiconductors, PSMN7R0-100BS Datasheet - Page 2

• Manufacturer Part Number: PSMN7R0-100BS
• Description: Standard level N-channel MOSFET in D2PAK package qualified to 175C
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
PSMN7R0-100BS
Objective data sheet
Pin
1
2
3
mb
Type number
PSMN7R0-100BS
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
It is not possible to make connection to pin 2.
Continuous current is limited by package.
Symbol Description
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
gate
drain
source
mounting base; connected to drain
Package
Name
D2PAK
[1]
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads (one
lead cropped)
All information provided in this document is subject to legal disclaimers.
Conditions
T
T
V
V
T
T
V
V
pulsed; t
pulsed; t
j
j
mb
mb
GS
GS
GS
sup
≥ 25 °C; T
≤ 175 °C; T
= 25 °C; see
= 25 °C
Rev. 2 — 2 March 2012
= 10 V; T
= 10 V; T
= 10 V; T
= 100 V; unclamped; R
N-channel 100V 6.8 mΩ standard level MOSFET in D2PAK.
p
p
≤ 10 µs; T
≤ 10 µs; T
j
Simplified outline
≤ 175 °C
mb
mb
j(init)
j
≥ 25 °C; R
= 100 °C; see
= 25 °C; see
Figure 2
= 25 °C; I
SOT404 (D2PAK)
mb
mb
= 25 °C; see
= 25 °C
GS
1
mb
D
GS
2
= 20 kΩ
= 100 A;
Figure 1
3
= 50 Ω
Figure 1
Figure 3
PSMN7R0-100BS
Graphic symbol
[1]
[1]
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
mbb076
G
© NXP B.V. 2012. All rights reserved.
Version
SOT404
Max
100
100
20
85
100
475
269
175
175
260
100
475
315
D
S
°C
°C
°C
Unit
V
V
V
A
A
A
W
A
A
mJ
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