PSMN7R0-100BS NXP Semiconductors, PSMN7R0-100BS Datasheet - Page 6

• Manufacturer Part Number: PSMN7R0-100BS
• Description: Standard level N-channel MOSFET in D2PAK package qualified to 175C
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN7R0-100BS
Objective data sheet
Table 6.
Symbol
t
t
t
t
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
Fig 5.
SD
r
(A)
I
D
300
240
180
120
60
0
function of drain-source voltage; typical values
Output characteristics: drain current as a
0
Characteristics
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
10
1
20
…continued
2
6
3
V
5.5
Conditions
V
R
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
GS
DS
DS
003a a d562
G(ext)
V
= 25 A; V
= 25 A; dI
(V) = 4
DS
Figure 17
= 50 V; R
= 50 V
4.5
(V)
5
= 4.7 Ω; T
4
Rev. 2 — 2 March 2012
GS
S
/dt = 100 A/µs; V
N-channel 100V 6.8 mΩ standard level MOSFET in D2PAK.
L
= 0 V; T
= 2 Ω; V
j
= 25 °C
Fig 6.
j
= 25 °C;
GS
12000
10000
(pF)
8000
6000
4000
2000
= 10 V;
C
GS
function of gate-source voltage; typical values
Input and reverse transfer capacitances as a
0
= 0 V;
5
PSMN7R0-100BS
Min
-
-
-
-
-
-
-
10
Typ
34.6
45.6
103.9
49.5
0.8
64
167
15
© NXP B.V. 2012. All rights reserved.
003a a d566
V
GS
Max
-
-
-
-
1.2
-
-
C
C
is s
rs s
(V)
20
ns
ns
ns
V
Unit
ns
ns
nC
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