ST92F150CV1 STMicroelectronics, ST92F150CV1 Datasheet - Page 402

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ST92F150CV1

Manufacturer Part Number
ST92F150CV1
Description
8-bit MCU
Manufacturer
STMicroelectronics
Datasheet

Specifications of ST92F150CV1

Internal Memory
Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 (Emulated EEPROM)
Minimum Instruction Time
83 ns (24 MHz int. clock)

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ST92F124/F150/F250 - ELECTRICAL CHARACTERISTICS
10-BIT ADC CHARACTERISTICS (Cont’d)
ADC Accuracy (V
1. Typical data is based on T
2. Monotonicity and No Missing Codes are guaranteed by design.
3. Refer to
Figure 162. ADC Accuracy Characteristics
402/429
1
1023
1022
1021
Symbol
|Et|
|Eo|
|Eg|
|Ed|
|El|
7
6
5
4
3
2
1
0
AV
SS
Digital Result DiHR/DiLR
1LSB
Figure
1
E
O
Monotonicity
No missing codes
Total unadjusted error
Offset error
Gain Error
Differential linearity error
Integral linearity error
IDEAL
2
162. for the definition of these parameters.
DD
3
=
A VDD A VSS
---------------------------------------- -
=5V+/-10%, T
Parameter
3)
4
3)
1024
A
=25°C, Vdd=5V
5
1 LSB
E
6
T
IDEAL
3)
3)
E
3)
7
A
L
=-40°C to +125°C)
(2)
E
D
1021 1022 1023 1024
(3)
(1)
f
Conditions
ADC
E
G
AV
= 4MHz
DD
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
E
between the actual and the ideal transfer curves.
E
transition and the first ideal one.
E
transition and the last actual one.
E
between actual steps and the ideal one.
E
between any actual transition and the end point
correlation line.
Guaranteed
Guaranteed
T
O
G
D
L
=Total Unadjusted Error: maximum deviation
=Integral Linearity Error: maximum deviation
=Differential Linearity Error: maximum deviation
=Offset Error: deviation between the first actual
=Gain Error: deviation between the last ideal
V
in
(LSB
IDEAL
2)
2)
)
Typ
1.5
1
1.5
0.5
0.5
1)
6
5.5
6
1.5
1.5
Max
Unit
LSB

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