FGL40N150D Fairchild Semiconductor, FGL40N150D Datasheet - Page 2

• Manufacturer Part Number: FGL40N150D
• Description: Electrical Characteristics Of The Igbt
• Manufacturer: Fairchild Semiconductor

©2002 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT
Electrical Characteristics of DIODE
Off Characteristics
BV
I
I
On Characteristics
V
V
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
V
t
CES
GES
d(on)
r
d(off)
f
rr
Symbol
Symbol
GE(th)
CE(sat)
FM
ies
oes
res
g
ge
gc
CES
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Diode Forward Voltage
Diode Reverse Recovery Time
Parameter
Parameter
I
I
F
F
= 10A
= 10A, di/dt = 200A/us
V
V
V
V
f = 1MHz
V
R
Resistive Load, T
V
V
I
I
C
C
GE
CE
GE
CE
CC
CE
GE
G
T
C
= 40A
= 40mA, V
= 51 , V
= 25 C unless otherwise noted
= V
= 30V
= 600 V, I
= 0V, I
= V
= 600 V, I
= 15V
Test Conditions
T
Test Conditions
C
= 25 C unless otherwise noted
CES
GES
,
V
,
C
V
GE
, V
, V
GE
GE
= 3mA
CE
C
C
GE
CE
= 15V
= 15V,
= 0V,
= 40A,
= 40A,
C
= V
= 0V
= 25 C
= 0V
GE
1500
Min.
3.5
2.5
Min.
--
--
--
--
--
--
--
--
--
--
--
--
--
--
2450
Typ.
220
100
350
200
100
110
Typ.
5.0
3.5
170
75
15
40
1.3
--
--
--
± 100
Max.
Max.
200
700
400
300
170
3.0
7.5
4.5
300
25
60
1.8
--
--
--
--
FGL40N150D Rev. A1
Units
Units
mA
nC
nC
nC
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
V