FGL40N150D Fairchild Semiconductor, FGL40N150D Datasheet - Page 3

• Manufacturer Part Number: FGL40N150D
• Description: Electrical Characteristics Of The Igbt
• Manufacturer: Fairchild Semiconductor

©2002 Fairchild Semiconductor Corporation
Fig 5. Saturation Voltage vs. V
Fig 1. Typical Output Characteristics
Fig 3. Collector to Emitter Saturation
100
20
16
12
80
60
40
20
8
4
0
6
5
4
3
2
1
0
25
0
0
Common Emitter
V
Voltage vs. Case Temperature
Common Emitter
T
GE
C
= 25
= 15V
o
Collector - Emitter Voltage, V
50
C
4
Gate - Emitter Voltage, V
2
Case Temperature, T
75
20A
8
40A
20V
80A
4
15V
100
12
10V
C
GE
[
Common Emitter
T
GE
o
C]
C
CE
[V]
= 25
6
125
[V]
16
o
V
C
I
I
I
C
C
C
GE
= 80A
= 40A
= 20A
= 6V
8V
150
20
8
Fig 2. Typical Output Characteristics
Fig 4. Typical Capacitance vs.
Fig 6. Saturation Voltage vs. V
5000
4000
3000
2000
1000
120
100
80
60
40
20
20
16
12
0
0
8
4
0
0
1
0
Collector to Emitter Voltage
Collector - Emitter Voltage, V
Collector - Emitter Voltage, V
2
4
Gate - Emitter Voltage, V
Cres
Coes
Cies
20A
4
8
40A
80A
12
6
10
Common Emitter
V
T
T
Common Emitter
V
Tc=25
GE
GE
GE
C
C
Common Emitter
T
GE
= 25
= 125
CE
CE
= 15V
C
[V]
=0V, f=1MHz
= 125
[V]
[V]
16
8
o
C
o
o
C
C
0
C
FGL40N150D Rev. A1
10
20