FGL40N150D Fairchild Semiconductor, FGL40N150D Datasheet - Page 5

• Manufacturer Part Number: FGL40N150D
• Description: Electrical Characteristics Of The Igbt
• Manufacturer: Fairchild Semiconductor

©2002 Fairchild Semiconductor Corporation
Fig 17. Reverse Current vs. Reverse Voltage
Fig 13. Gate Charge Characteristics
Fig 15. Typical T
1000
1E-3
0.01
100
500
450
400
350
300
250
200
150
100
0.1
10
16
14
12
10
50
8
6
4
2
0
1
0
0
0
Common Emitter
R
T
C
L
300.0
= 25
= 15 , V
25
50
o
C
T
C
CC
= 125
= 600V
Reverse Voltage, V
Gate Charge, Qg [nC]
600.0
100
50
rr
I
vs. di/dt
F
= 10A
di/dt [A/us]
100
150
75
900.0
100
200
R
[V]
25
1.2k
125
250
150
1.5k
300
Fig 18. Typical Forward Voltage Drop
Fig 16. Typical T
Fig 14. SOA Characteristics
0.01
100
100
300
270
240
210
180
150
120
0.1
0.1
10
10
90
60
30
1
1
0.4
0.1
0
Ic MAX (Continuous)
Ic MAX (Pulsed)
Single Nonrepetitive
Pulse Tc = 25
Curves must be derated
linearly with increase
in temperature
vs. Forward Current
1
0.6
Collector - Emitter Voltage, V
2
Instantaneous Voltage, V
1
di/dt = 50A/us
T
o
C
C
=125
Forward Current, I
3
0.8
rr
vs. Forward Current
4
DC Operation
10
1.0
5
100A/us
25
6
F
1.2
100
1ms
[A]
F
7
[V]
200A/us
CE
100 s
[V]
8
1.4
1000
50 s
9
FGL40N150D Rev. A1
1.6
10