P1007M4 Cystech Electonics Corp., P1007M4 Datasheet

Page 1

Low Vcesat PNP Epitaxial Planar Transistor BTB1205I3 Features Low =-0.38 V (typical CE(sat) CE(sat) Excellent DC current gain characteristics Fast switching speed Large current capacity Pb-free package Applications Strobe, voltage regulators, relay drivers, lamp drivers ...

Page 2

Absolute Maximum Ratings Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Power Dissipation (T =25℃) A Power Dissipation (T =25℃) C Junction Temperature Storage Temperature . Note : 1 Single Pulse Pw=10ms Characteristics (Ta=25 C) ...

Page 3

Characteristic Curves Current Gain vs Collector Current 1000 100 100 Collector Current---IC(mA) Saturation Voltage vs Collector Current 10000 VBESAT@IC=10IB 1000 100 1 10 100 Collector Current---IC(mA) Output Characteristics 4 3.5 3 2.5 2 1.5 1 0.5 0 ...

Page 4

Characteristic Curves(Cont.) On Voltage vs Collector Current 10000 VBEON@VCE=2V 1000 100 1 10 100 Collector Current---IC(mA) BTB1205I3 CYStech Electronics Corp. 1000 10000 Spec. No. : C815I3 Issued Date : 2005.03.29 Revised Date : Page No CYStek Product ...

Page 5

TO-251 Dimension Inches DIM Min. Max. A 0.0177 0.0217 B 0.0354 0.0591 C 0.0177 0.0236 D 0.0866 0.0945 E 0.2520 0.2677 F 0.2677 0.2835 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead ...