HM-6617 Intersil Corporation, HM-6617 Datasheet

HM-6617

Manufacturer Part Number

HM-6617

Description

2k X 8 Cmos Prom

Manufacturer

Intersil Corporation

Datasheet

1.HM-6617.pdf (7 pages)

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March 1997

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

Features

• This Circuit is Processed in Accordance to MIL-STD-

• Low Power Standby and Operating Power

• Fast Access Time. . . . . . . . . . . . . . . . . . . . . . . 90/120ns

• Industry Standard Pinout

• Single 5.0V Supply

• CMOS/TTL Compatible Inputs

• High Output Drive . . . . . . . . . . . . . . . . 12 LSTTL Loads

• Synchronous Operation

• On-Chip Address Latches

• Separate Output Enable

• Operating Temperature Range . . . . . . -55

Ordering Information

Pinouts

SBDIP

SLIM SBDIP

CLCC

GND

883 and is Fully Conformant Under the Provisions of

Paragraph 1.2.1.

- ICCSB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100 A

- ICCOP . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA at 1MHz

HM-6617/883 (SBDIP)

PACKAGE

TOP VIEW

A10

TEMPERATURE RANGE

-55

C to +125

Intersil Corporation 1999

14 15

C to +125

HM-6617/883 (CLCC)

16 17 18 19 20

TOP VIEW

6-250

32 31 30

HM1-6617B/883

HM6-6617B/883

HM4-6617B/883

HM-6617/883

Description

The HM-6617/883 is a 16,384-bit fuse link CMOS PROM in

a 2K word by 8-bit/word format with “Three-State” outputs.

This PROM is available in the standard 0.600 inch wide 24

pin SBDIP, the 0.300 inch wide slim SBDIP, and the JEDEC

standard 32 pad CLCC.

The HM-6617/883 utilizes a synchronous design technique.

This includes on-chip address latches and a separate output

enable control which makes this device ideal for applications

utilizing recent generation microprocessors. This design

technique, combined with the Intersil advanced self-aligned

silicon gate CMOS process technology offers ultra-low

standby current. Low ICCSB is ideal for battery applications

or other systems with low power requirements.

The Intersil NiCr fuse link technology is utilized on this and

other Intersil CMOS PROMs. This gives the user a PROM

with permanent, stable storage characteristics over the full

industrial and military temperature voltage ranges. NiCr fuse

technology combined with the low power characteristics of

CMOS provides an excellent alternative to standard bipolar

PROMs or NMOS EPROMs.

All bits are manufactured storing a logical “0” and can be

selectively programmed for a logical “1” at any bit location.

90ns

A10

HM1-6617B/883

HM6-6617B/883

HM4-6617B/883

NOTE: P should be hardwired to V

A0-A10

P (Note)

120ns

except during programming.

2K x 8 CMOS PROM

PIN DESCRIPTION

No Connect

Address Inputs

Chip Enable

Data Output

Power (+5V)

Output Enable

Program Enable

DESCRIPTION

File Number

D24.6

D24.3

J32.A

PACKAGE NO.

3016.1

Related parts for HM-6617

HM-6617 Summary of contents

Page 1

... Copyright HM-6617/883 Description The HM-6617/883 is a 16,384-bit fuse link CMOS PROM word by 8-bit/word format with “Three-State” outputs. This PROM is available in the standard 0.600 inch wide 24 pin SBDIP, the 0.300 inch wide slim SBDIP, and the JEDEC standard 32 pad CLCC ...

Page 2

... A4 LSB ALL LINES POSITIVE LOGIC: ACTIVE HIGH THREE-STATE BUFFERS: A HIGH OUTPUT ACTIVE ADDRESS LATCHES AND GATED DECODERS: LATCH ON FALLING EDGE OF E GATE ON FALLING EDGE OF G HM-6617/883 GATED 128 x 128 ROW MATRIX 128 DECODER GATED COLUMN G DECODER AND DATA ...

Page 3

... CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied. TABLE 1. HM-6617/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS Device Guaranteed and 100% Tested ...

Page 4

... CL 50pF. 3. Typical derating = 5mA/MHz increase in ICCOP. 4. All tests performed with P hardwired to VCC. 5. TAVQV = TELQV + TAVEL. 6. Tested as follows 1MHz, VIH = 2.4V, VIL = 0.8V, IOH = -1mA, IOL = +1mA, VOH TABLE 3. HM-6617/883 AC AND DC ELECTRICAL PERFORMANCE SPECIFICATIONS (NOTES 1, 2) PARAMETER SYMBOL CONDITIONS Input Capacitance ...

Page 5

... TEHEL G xxxxxxxxxxxxxxxxxxxxxxxxxxxx DATA xxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxx OUTPUT xxxxxxxxxxxxxxxxxxxxxxxxxxxx Q0-Q7 Test Circuit DUT C L (NOTE) NOTE: TEST HEAD CAPACITANCE HM-6617/883 TABLE 4. APPLICABLE SUBGROUPS METHOD 100%/5004 100%/5004 100%/5004 100%/5004 Samples/5005 8A, 8B, 9, 10, 11 Samples/5005 TAVQV xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx 1.5V xxxxxxxxxxxxxxxxxxxxxxxxx TELEL ...

Page 6

... GND GND VCC/2 NOTES 100KHz 10%. All resistors = 47k Unless Otherwise Noted. VCC = 5.5V 0.05V 0.01 F min. HM-6617/883 HM-6617/883 (.600 INCH) SBDIP VCC f10 f6 VCC f5 f12 f4 f11 2.4K f1 2.4K 2.4K VCC/2 VCC/2 2.4K 2.4K GND HM-6617/883 CLCC f10 ...

Page 7

... No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com HM-6617/883 GLASSIVATION: Type: SiO 2 Å Thickness: 7k WORST CASE CURRENT DENSITY 1 A/cm HM-6617/883 VCC GND 6-256 Å ...

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