HM-6551 Intersil Corporation, HM-6551 Datasheet

no-image

HM-6551

Manufacturer Part Number
HM-6551
Description
256 X 4 Cmos Ram
Manufacturer
Intersil Corporation
Datasheet
March 1997
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
Features
• This Circuit is Processed in Accordance to MIL-STD-
• Low Power Standby . . . . . . . . . . . . . . . . . . . . 50 W Max
• Low Power Operation . . . . . . . . . . . . . 20mW/MHz Max
• Fast Access Time. . . . . . . . . . . . . . . . . . . . . . 220ns Max
• Data Retention . . . . . . . . . . . . . . . . . . . . . . . .at 2.0V Min
• TTL Compatible Input/Output
• High Output Drive - 1 TTL Load
• Internal Latched Chip Select
• High Noise Immunity
• On-Chip Address Register
• Latched Outputs
• Three-State Output
Ordering Information
Pinout
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
CERDIP
PACKAGE
|
Copyright
TEMPERATURE RANGE
-55
©
o
Intersil Corporation 1999
C to +125
GND
Q0
D0
D1
PIN
A3
A2
A1
A0
A5
A6
A7
o
W
Q
A
E
S
D
HM-6551/883 (CERDIP)
C
11
10
1
2
3
4
5
6
7
8
9
TOP VIEW
Address Input
Chip Enable
Write Enable
Chip Select
Data Input
Data Output
HM-6551B/883
6-101
DESCRIPTION
HM-6551/883
Description
The HM-6551/883 is a 256 x 4 static CMOS RAM fabricated
using self-aligned silicon gate technology. Synchronous cir-
cuit design techniques are employed to achieve high perfor-
mance and low power operation. On chip latches are
provided for address and data outputs allowing efficient
interfacing with microprocessor systems. The data output
buffers can be forced to a high impedance state for use in
expanded memory arrays.
The HM-6551/883 is a fully static RAM and may be main-
tained in any state for an indefinite period of time. Data
retention supply voltage and supply current are guaranteed
over temperature.
220ns
12
22
21
20
19
18
17
16
15
14
13
VCC
A4
W
S1
E
S2
Q3
D3
Q2
D2
Q1
HM1-6551/883
300ns
F22.4
256 x 4 CMOS RAM
PKG. NO.
File Number
2988.1

Related parts for HM-6551

HM-6551 Summary of contents

Page 1

... Copyright HM-6551/883 Description The HM-6551/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous cir- cuit design techniques are employed to achieve high perfor- mance and low power operation. On chip latches are provided for address and data outputs allowing efficient interfacing with microprocessor systems ...

Page 2

... and Q latches on rising edge Address Latches And Gated Decoders: Latch on falling edge of E and gate on falling edge All lines positive logic-active high. 4. Three-State Buffers: A high output active. 5. Data Latches: L High and Q latches on falling edge of L. HM-6551/883 5 GATED ROW 32 MATRIX ...

Page 3

... Operating Conditions Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Operating Temperature Range . . . . . . . . . . . . . . . . -55 Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to +0.8V TABLE 1. HM-6551/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS Device Guaranteed and 100% Tested PARAMETER SYMBOL Output Low Voltage VOL VCC = 4 ...

Page 4

... TABLE 2. HM-6551/883 A.C. ELECTRICAL PERFORMANCE SPECIFICATIONS Device Guaranteed and 100% Tested (NOTES 1, 2) PARAMETER SYMBOL CONDITIONS Chip Enable (1) TELQV VCC = 4.5 and Access Time 5.5V Address Access (2) TAVQV VCC = 4.5 and Time 5.5V, Note 3 Chip Select 1 (3) TS1LQX VCC = 4.5 and Output Enable 5.5V Time Write Enable (4) TWLQZ VCC = 4 ...

Page 5

... TABLE 3. HM-6551B/883 AND HM-6551/883 ELECTRICAL PERFORMANCE SPECIFICATIONS PARAMETER SYMBOL Input Capacitance CI VCC = Open 1MHz, All Measurements Referenced to Device Ground Output Capacitance CO VCC = Open 1MHz, All Measurements Referenced to Device Ground NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters are characterized upon initial design and after major process and/or design changes ...

Page 6

... The HM-6551/883 Read Cycle is initiated by the falling edge of E. This signal latches the input address word and S2 into on-chip registers providing the minimum setup and hold times are met. After the required hold time, these inputs may change state without affecting device operation. S2 acts as a high order address and simplifi ...

Page 7

... Data may be modified an indefinite number of times during any write cycle (TELEH). The HM-6551/883 may be used on a common I/O bus struc- ture by tying the input and output pins together. The multiplex- ing is accomplished internally by the W line. In the write cycle, when W goes low, the output buffers are forced to a high impedance state ...

Page 8

... F10 F11 NOTES: All resistors 47k 5 100kHz 10 F12 = F11 VCC = 5.5V 0.5V. VIH = 4.5V 10%. VIL = -0.2V to +0.4V 0.01 F Min. HM-6551/883 + IOH 1.5V - EQUIVALENT CIRCUIT HM-6551/883 CERDIP VCC C1 1 VCC ...

Page 9

... No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com HM-6551/883 WORST CASE CURRENT DENSITY: 5 1.337 x 10 A/cm LEAD TEMPERATURE (10s soldering): o 300 C HM-6551/883 6-109 ...

Related keywords