EVX10AS150ATP ETC-unknow, EVX10AS150ATP Datasheet - Page 46

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EVX10AS150ATP

Manufacturer Part Number
EVX10AS150ATP
Description
Adc Single 2.5gsps 10-bit Lvds 317-pin Ebga
Manufacturer
ETC-unknow
Datasheet

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EV10AS150A
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46
Die Junction Temperature Monitoring
0954B–BDC–12/09
An accurate tuning of aperture delay, gain and offset allows to interleave two ADCs with minimum num-
ber of external analog components, thus providing an equivalent 5 Gsps ADC. Due to matching
difficulties of the roll off of the input frequency response beyond 4 GHz, it is not recommended to use the
ADC in interleaved mode for coding of broadband signal beyond 4 GHz.
A die junction temperature measurement setting is available, for maximum junction temperature monitor-
ing (hot point measurement).
The measurement method consists in forcing a 1 mA current into a diode mounted transistor and sens-
ing the voltage across the DIODE pin and the closest available ground pin.
The measurement setup is described in the Figure hereafter:
Note:
Figure 4-15. ADC Diode for Die Junction Temperature Monitoring Setup (2 Reverse Diodes for
CAUTION:
Respect the current source polarity and the current flow of 1 mA through the diode.
The forward voltage drop (V
parasitic resistance), is given below (I
If not used, DIODE pin can be left floating.
Protection)
DIODE
) across diode component, versus junction temperature, (including chip
DIODE
2 protection
DIODE
AGND
diodes
= 1mA).
Protection
Diodes
1 mA
e2v semiconductors SAS 2009

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