NE5500479A Renesas Electronics Corporation., NE5500479A Datasheet
NE5500479A
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NE5500479A Summary of contents
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... FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for cellular handsets. Dies are manufactured using our NEWMOS technology (our 0.6 µ m WSi gate laterally diffused MOS FET) and housed in a surface mount package. The device can deliver 31.5 dBm output power with 62% power added efficiency at 900 MHz as AMPS final output stage amplifier under the 3 ...
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... Channel to Case 900 MHz dBm 3 300 mA, Note DS Dset f = 900 MHz dBm, out 3 300 mA, Note op DS Dset add Data Sheet PU10119EJ03V0DS NE5500479A MIN. TYP. MAX. Unit 3.0 3.5 8 2.0 3.5 V − 600 700 dBm MIN. TYP. ...
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... DRAIN EFFICIENCY, POWER ADDED EFFICIENCY vs. GATE TO SOURCE VOLTAGE 100 1 250 900 MHz dBm in 1 000 750 50 500 250 0 4.0 0 1.0 (V) Gate to Source Voltage V Data Sheet PU10119EJ03V0DS NE5500479A 2.0 2.5 3.0 (V) GS η d η add Input Power P (dBm) in η d η add 2.0 3 ...
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... DRAIN EFFICIENCY, POWER ADDED EFFICIENCY vs. GATE TO SOURCE VOLTAGE 1 250 100 900 MHz dBm in 1 000 750 50 500 250 0 4.0 0 1.0 (V) Gate to Source Voltage V Data Sheet PU10119EJ03V0DS NE5500479A η d η add Input Power P (dBm) in η d η add 2.0 3.0 4.0 (V) GS ...
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... Microwave] → [Device Parameters] URL http://www.csd-nec.com/ LARGE SIGNAL IMPEDANCE ( (MHz) Z (Ω 900 TBD Note Z is the conjugate of optimum load impedance at given voltage, idling current, input power and frequency 3 300 mA dBm Note (Ω) OL TBD Data Sheet PU10119EJ03V0DS NE5500479A 5 ...
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... MAX. Source Gate 0.4±0.15 5.7 MAX. 79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm) Gate 6 (Bottom View) 1.5±0.2 Source Drain Gate 3.6±0.2 4.0 1.7 Source Stop up the hole with a rosin or something to avoid solder flow. Drain φ Through Hole: 0.2 × 33 0.5 0.5 6.1 Data Sheet PU10119EJ03V0DS NE5500479A Drain 0.8 MAX. ...
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... Data Sheet PU10119EJ03V0DS NE5500479A For soldering Condition Symbol IR260 VP215 WS260 HS350-P3 7 ...
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... NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). 8 Please check with an NEC sales representative for Data Sheet PU10119EJ03V0DS NE5500479A The M8E 00 0110 ...
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... Taipei Branch Office TEL: +886-2-8712-0478 TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 http://www.csd-nec.com/ FAX: +852-3107-7309 FAX: +886-2-2545-3859 FAX: +82-2-558-5209 NE5500479A 0306 ...