NE5500479A Renesas Electronics Corporation., NE5500479A Datasheet - Page 2

• Manufacturer Part Number: NE5500479A
• Description: 3.5 V Operation Silicon Rf Power Ldmos Fet For 900 Mhz 1 W Transmission Amplifiers
• Manufacturer: Renesas Electronics Corporation.

ABSOLUTE MAXIMUM RATINGS (T
RECOMMENDED OPERATING CONDITIONS
ELECTRICAL CHARACTERISTICS (T
2
Gate to Source Leak Current
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Transconductance
Drain to Source Breakdown Voltage
Thermal Resistance
Linear Gain
Output Power
Operating Current
Power Added Efficiency
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current (Pulse Test)
Total Power Dissipation
Channel Temperature
Storage Temperature
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Note Duty Cycle ≤ 50%, T
Note DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
Parameter
Parameter
Parameter
on
≤ 1 s
Symbol
Symbol
Symbol
BV
I
V
V
P
T
D
T
I
I
η
P
G
I
V
V
V
R
G
GSS
DSS
I
P
DS
GS
D
Note
stg
tot
ch
I
op
add
out
GS
DSS
DS
D
th
m
th
L
in
A
A
= +25° ° ° ° C)
V
V
V
V
I
Channel to Case
f = 900 MHz, P
V
f = 900 MHz, P
V
f = 900 MHz, V
DSS
= +25° ° ° ° C)
Data Sheet PU10119EJ03V0DS
GSS
DSS
DS
DS
DS
DS
= 4.8 V, I
= 4.8 V, I
= 3.5 V, I
= 3.5 V, I
= 10 µ A
= 5.0 V
= 8.5 V
−65 to +125
Ratings
Test Conditions
Test Conditions
20.0
125
5.0
1.0
2.0
10
D
D
Dset
Dset
= 1 mA
= 600 mA
in
in
DS
= 10 dBm,
= 300 mA, Note
= 20 dBm,
= 300 mA, Note
= 3.5 V
Unit
°C
°C
W
V
V
A
A
MIN.
MIN.
30.5
3.0
1.0
18
20
55
0
−
−
−
−
−
−
−
TYP.
TYP.
1.35
1.43
15.0
31.5
600
600
3.5
2.0
20
24
10
62
−
−
NE5500479A
MAX.
MAX.
700
100
100
8.0
3.5
2.0
22
−
−
−
−
−
−
−
°C/W
dBm
dBm
Unit
Unit
mA
mA
nA
nA
dB
%
V
V
V
S
V