NE5500479A Renesas Electronics Corporation., NE5500479A Datasheet - Page 3

• Manufacturer Part Number: NE5500479A
• Description: 3.5 V Operation Silicon Rf Power Ldmos Fet For 900 Mhz 1 W Transmission Amplifiers
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
14.0
12.0
10.0
8.0
6.0
4.0
2.0
35
30
25
20
15
10
32
31
30
29
28
27
0
0.0
0
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
OUTPUT POWER, DRAIN CURRENT
vs. GATE TO SOURCE VOLTAGE
V
Step = 1.0 V
V
I
f = 900 MHz
Dset
GS
V
f = 900 MHz
P
DS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DS
in
= 10 V MAX.
= 3.5 V
2
= 300 mA
= 20 dBm
= 3.5 V
5
Drain to Source Voltage V
Gate to Source Voltage V
1.0
4
Input Power P
10
6
P
I
out
D
2.0
15
8
in
10
(dBm)
20
P
3.0
GS
DS
12
I
A
out
D
(V)
(V)
= +25° ° ° ° C)
25
14
Data Sheet PU10119EJ03V0DS
4.0
16
30
1 250
1 000
750
500
250
0
1 250
1 000
750
500
250
0
10 000
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
1 000
100
100
100
10
50
50
1
0
0
1.0
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. INPUT POWER
V
I
f = 900 MHz
Dset
V
f = 900 MHz
P
DS
V
DS
in
SET DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
DS
= 3.5 V
= 300 mA
= 20 dBm
= 3.5 V
= 3.5 V
5
Gate to Source Voltage V
Gate to Source Voltage V
1.5
1.0
Input Power P
10
η
η
add
d
2.0
2.0
15
in
(dBm)
20
η
GS
3.0
GS
2.5
η
NE5500479A
add
d
(V)
(V)
25
3.0
4.0
30
3