BUJ105AD NXP Semiconductors, BUJ105AD Datasheet - Page 2

• Manufacturer Part Number: BUJ105AD
• Description: Buj105ad Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
3. Ordering information
Table 2:
4. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 14196
Product data sheet
Type number
BUJ105AD
Symbol
V
V
V
I
I
I
I
P
T
T
C
CM
B
BM
Fig 1. Normalized total power dissipation as a function of mounting base temperature
CESM
CEO
CBO
tot
stg
j
P
Ordering information
Limiting values
der
Parameter
peak collector-emitter voltage
collector-emitter voltage
collector-base voltage
collector current (DC)
peak collector current
base current (DC)
peak base current
total power dissipation
storage temperature
junction temperature
%
=
Package
Name
D-PAK
------------------------ -
P
tot 25 C
P
tot
100%
Description
plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT428
P
(%)
der
120
80
40
0
0
Rev. 01 — 14 December 2004
40
Conditions
V
open base
open emitter
T
mb
BE
=
= 0 V
80
25 C; see
120
Figure 1
T
001aab993
mb
( C)
160
Silicon diffused power transistor
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Min
-
-
-
-
-
-
-
-
-
65
BUJ105AD
Max
700
400
700
8
16
4
8
80
+150
150
Version
Unit
V
V
V
A
A
A
A
W
C
C
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