BUJ105AD NXP Semiconductors, BUJ105AD Datasheet - Page 6

• Manufacturer Part Number: BUJ105AD
• Description: Buj105ad Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 14196
Product data sheet
Fig 9. DC current gain as a function of collector
Fig 11. Collector-emitter saturation voltage as a
V
h
CEsat
(V)
FE
10
2.0
1.6
1.2
0.8
0.4
10
1
0
2
10
10
current; typical values at V
T
function of base current; typical values
j
= 25 C.
T
2
2
j
I
= 100 C
C
= 1 A
25 C
40 C
10
10
2 A 3 A
1
1
4 A
1
1
CE
= 1 V
I
I
C
B
001aab995
001aac045
(A)
(A)
Rev. 01 — 14 December 2004
10
10
Fig 10. DC current gain as a function of collector
Fig 12. Base-emitter saturation voltage as a function of
V
h
BEsat
(V)
FE
10
1.3
1.1
0.9
0.7
0.5
10
1
2
10
10
current; typical values at V
I
collector current; typical values
C
/I
2
1
T
T
B
j
j
= 100 C
= 40 C
= 4.
100 C
25 C
40 C
25 C
10
Silicon diffused power transistor
1
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
1
BUJ105AD
1
CE
I
C
(A)
= 5 V
I
C
001aac046
001aac047
(A)
10
10
6 of 12