BUJ105AD NXP Semiconductors, BUJ105AD Datasheet - Page 3

• Manufacturer Part Number: BUJ105AD
• Description: Buj105ad Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
5. Thermal characteristics
Table 4:
[1]
6. Characteristics
Table 5:
T
9397 750 14196
Product data sheet
Symbol
R
R
Symbol
Static characteristics
I
I
I
I
V
V
V
h
h
CES
CBO
CEO
EBO
mb
Fig 2. Transient thermal impedance from junction to mounting base as a function of pulse duration
FE
FEsat
CEOsus
CEsat
BEsat
th(j-mb)
th(j-a)
Z
= 25 C; unless otherwise specified.
Device mounted on a printed-circuit board; minimum footprint
(K/W)
th(j-mb)
10
10
10
1
1
2
10
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Parameter
collector-emitter cut-off current
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
collector-emitter sustaining
voltage
collector-emitter saturation
voltage
base-emitter saturation voltage
DC current gain
DC saturation current gain
5
Thermal characteristics
Characteristics
= 0.5
0.2
0.1
0.05
0.02
0.01
10
4
10
Conditions
V
V
V
V
V
I
see
I
I
I
I
I
3
B
C
C
C
C
C
BE
BE
BE
CEO
EB
= 0 A; I
= 4.0 A; I
= 4.0 A; I
= 1 mA; V
= 500 mA; V
= 4.0 A; V
Rev. 01 — 14 December 2004
Figure 3
= 0 V; V
= 0 V; V
= 0 V; V
= 9 V; I
= V
CEOMmax
C
= 10 mA; L = 25 mH;
C
B
B
CE
CE
CE
CE
CE
and
= 0 A
= 0.8 A; see
= 0.8 A; see
10
CE
= V
= V
= V
= 5 V
= 5 V
2
4
= 5 V; see
= 400 V
Conditions
see
CESMmax
CESMmax
CESMmax
Figure 2
Figure 11
Figure 12
; T
Figure 10
j
= 125 C
10
1
Silicon diffused power transistor
[1]
Min
-
-
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
[1]
[1]
[1]
[1]
P
tot
Min
-
-
-
-
-
400
-
-
10
13
8
1
t
Typ
-
75
p
BUJ105AD
T
Typ
-
-
-
-
-
-
0.3
1.0
14
23
11
t
p
(s)
=
001aab998
Max
1.56
-
T
t
t
p
Max
0.2
0.5
0.2
0.1
1
-
1.0
1.5
34
36
15
10
Unit
K/W
K/W
Unit
mA
mA
mA
mA
mA
V
V
V
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