GB18N40LZ STMicroelectronics, GB18N40LZ Datasheet - Page 3

• Manufacturer Part Number: GB18N40LZ
• Description: Eas 180 Mj - 400 V - Internally Clamped Igbt
• Manufacturer: STMicroelectronics

STGD18N40LZ - STGB18N40LZ
1
Electrical ratings
Table 2.
1. Calculated according to the iterative formula:
2. Pulse width limited by max. junction temperature allowed
Table 3.
Symbol
Symbol
R
I
R
V
V
P
I
CP
V
E
E
E
T
C
thj-case
thj-amb
CES
ECS
TOT
T
GE
SD
stg
AS
AS
(1)
j
(2)
Collector-emitter voltage (v
Emitter collector voltage (V
Collector current (continuous) at T
Pulsed collector current
Gate-emitter voltage
Total dissipation at T
Single pulse energy T
Single pulse energy T
Human body model, R= 1550 Ω , C = 100 pF
Machine model, R = 0, C = 100 pF
Charged device model
Storage temperature
Operating junction temperature
Absolute maximum ratings
Thermal resistance
Thermal resistance junction-case max
Thermal resistance junction-ambient max
C
I
C
Parameter
Parameter
C
C
= 25 °C
(
= 25 °C, L = 3 mH, R
=150 °C, L = 3 mH, R
T
C
)
=
GE
GE
----------------------------------------------------------------------------------------------------- -
R
THJ C
= 0)
= 0)
–
C
×
= 100 °C
T
V
JMAX
CESAT MAX
–
T
(
G
C
G
= 1 KΩ
= 1 KΩ
)
(
T
C
,
I
C
)
DPAK
IPAK
1.2
DPAK
65
IPAK
125
25
V
V
– 55 to 175
CES(clamped)
GE(clamped)
Value
Value
300
180
800
20
40
8
2
Electrical ratings
D²PAK
D²PAK
I²PAK
I²PAK
62.5
150
30
1
°C/W
°C/W
Unit
Unit
mJ
mJ
kV
kV
°C
W
V
V
A
A
V
V
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