GB18N40LZ STMicroelectronics, GB18N40LZ Datasheet - Page 7

• Manufacturer Part Number: GB18N40LZ
• Description: Eas 180 Mj - 400 V - Internally Clamped Igbt
• Manufacturer: STMicroelectronics

STGD18N40LZ - STGB18N40LZ
Figure 8.
Figure 10. Collector emitter leakage current
Figure 12. Normalized gate threshold voltage
I
C
(A)
60
50
40
30
20
10
0
0
Collector current vs collector
emitter voltage @ 175 °C
vs. temperature
vs temperature
1
V
GE
2
= 8 V
3
T
C
V
= 175 °C
GE
4
= 5 V
V
V
V
GE
GE
GE
= 3.8 V
= 4.5 V
HV42400
5
= 4 V
V
CE
(V)
6
Figure 9.
Figure 11. Normalized collector emitter
Figure 13. Normalized collector emitter
I
C
(A)
30
24
18
12
6
0
1
T
T
C
Transfer characteristics
breakdown voltage vs temperature
voltage vs temperature
C
= 175 °C
= 25 °C
2
Electrical characteristics
T
C
3
= -40 °C
4
HV38710
V
GE
(V)
5
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