GB18N40LZ STMicroelectronics, GB18N40LZ Datasheet - Page 4

• Manufacturer Part Number: GB18N40LZ
• Description: Eas 180 Mj - 400 V - Internally Clamped Igbt
• Manufacturer: STMicroelectronics

Electrical characteristics
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Electrical characteristics
(T
Table 4.
V
V
CASE
CES(clamped)
GE(clamped)
V
Symbol
V
V
(BR)ECS
V
I
CE(sat)
I
R
GE(th)
CES
GES
R
GEP
GE
=25°C unless otherwise specified)
G
Static electrical characteristics
Collector emitter
clamped voltage
(V
Emitter collector
break-down voltage
(V
Gate emitter
clamped voltage
Collector cut-off
current
(V
Gate cut-off
current (V
Gate emitter
resistance
Gate resistance
Gate threshold
voltage
Gate emitter plateau
voltage
Collector emitter
saturation voltage
GE
GE
GE
Parameter
= 0)
= 0)
= 0)
CE
= 0)
I
T
I
I
V
V
V
V
V
V
V
V
V
T
V
C
C
G
C
GE
GE
GE
C
GE
CE
CE
CE
CE
CE
CE
= 2 mA, R
= 75 mA
= ±2 mA
= 150 °C
= - 40 °C to 150 °C
= 12 V, I
= 12 V, I
= 15 V, T
= 200 V,T
= ±10 V
= 12 V, I
= 12 V, I
= 4.5 V, I
= 4.5 V, I
= 3.8 V, I
Test conditions
G
C
C
C
C
C
C
C
C
C
= 1 kΩ
= 1 mA
= 1 mA, T
= 1 mA,T
= 10 A
= 10 A
= 10 A,
= 6 A
= 150 °C
= 150 °C
C
C
STGD18N40LZ - STGB18N40LZ
= -40 °C
=150 °C
Min.
370
450
1.4
1.2
0.7
20
12
12
Typ.
1.35
1.30
1.30
400
625
1.6
1.6
2.9
28
16
Max. Unit
430
100
830
2.3
1.7
16
10
22
KΩ
KΩ
µA
µA
µA
V
V
V
V
V
V
V
V
V
V