SI1016X Vishay Siliconix, SI1016X Datasheet - Page 2

• Manufacturer Part Number: SI1016X
• Description: Complementary N and P-Channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Si1016X
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
b
Parameter
a
a
a
a
_
Symbol
V
r
I
DS(on)
I
I
V
t
GS(th)
D(on)
Q
Q
t
GSS
DSS
OFF
g
Q
ON
SD
gd
fs
gs
g
V
I
V
I
DS
D
D
DS
V
^ –200 A, V
^ 200 mA, V
V
= –10 V, V
DS
New Product
DS
= 10 V, V
V
V
V
V
= –16 V, V
V
V
V
V
V
V
GS
GS
GS
I
V
= 16 V, V
DS
V
V
V
I
S
V
V
DS
V
DS
GS
GS
GS
S
DS
DS
DS
DS
DD
DS
= –150 mA, V
DS
DD
= 150 mA, V
= –4.5 V, I
= –2.5 V, I
= –1.8 V, I
= –10 V, I
= 0 V, V
= –5 V, V
= V
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
= 10 V, I
= –16 V, V
= V
= –10 V, R
= 5 V, V
= 16 V, V
= 10 V, R
GS
N-Channel
N-Channel
P-Channel
N-Channel
P-Channel
Test Condition
GS
GEN
GS
GEN
GS
GS
GS
= –4.5 V, I
, I
= 4.5 V, I
, I
GS
= –4.5 V, R
D
= 0 V, T
D
D
D
= 0 V, T
= 4.5 V, R
GS
GS
D
D
D
D
D
D
= –250 mA
GS
= 400 mA
= –250 mA
= 250 mA
L
= 600 mA
= –350 mA
= 500 mA
= –300 mA
= 350 mA
= –150 mA
= "4.5 V
GS
GS
L
GS
= 4.5 V
= –4.5 V
= 47 W
"
= 47 W
= 0 V
= 0 V
= 0 V
= 0 V
D
J
D
J
= 250 mA
= 85_C
W
= –250 mA
W
= 85_C
G
G
= 10 W
= 10 W
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–0.45
Min
–700
0.45
700
S-03104—Rev. A, 08-Feb-01
"0.5
"1.0
Typ
1500
–0.3
0.41
0.80
0.53
1.20
0.70
1.80
–0.8
750
150
225
450
0.3
1.0
0.4
0.8
75
25
35
5
5
Document Number: 71168
Max
"1.0
"2.0
–100
0.70
0.85
1.25
–1.2
100
1.2
1.6
2.7
1.2
–5
5
Unit
mA
m
mA
nA
m
mA
pC
ns
W
W
V
S
V