SI1016X Vishay Siliconix, SI1016X Datasheet - Page 3

• Manufacturer Part Number: SI1016X
• Description: Complementary N and P-Channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Document Number: 71168
S-03104—Rev. A, 08-Feb-01
1.0
0.8
0.6
0.4
0.2
0.0
4.0
3.2
2.4
1.6
0.8
0.0
0.0
5
4
3
2
1
0
0
0.0
V
I
D
0.5
DS
= 250 mA
On-Resistance vs. Drain Current
200
= 10 V
V
DS
0.2
Q
Output Characteristics
1.0
g
– Drain-to-Source Voltage (V)
I
D
– Total Gate Charge (nC)
– Drain Current (mA)
400
Gate Charge
V
1.5
GS
V
0.4
GS
= 1.8 V
= 5 thru 1.8 V
600
2.0
V
0.6
V
GS
800
2.5
GS
= 2.5 V
1 V
= 4.5 V
3.0
1000
_
0.8
New Product
1200
1000
1.60
1.40
1.20
1.00
0.80
0.60
800
600
400
200
100
80
60
40
20
0
0
–50
0.0
0
On-Resistance vs. Junction Temperature
–25
C
0.5
V
V
iss
4
DS
GS
T
Transfer Characteristics
C
J
oss
– Junction Temperature (_C)
0
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
Capacitance
1.0
8
T
25
C
25_C
= –55_C
Vishay Siliconix
V
I
D
C
GS
50
= 350 mA
rss
1.5
12
= 4.5 V
V
f = 1 MHz
GS
75
V
I
Si1016X
125_C
D
GS
= 0 V
= 150 mA
2.0
www.vishay.com
16
= 1.8 V
100
125
2.5
20
3