SI1016X Vishay Siliconix, SI1016X Datasheet - Page 5

• Manufacturer Part Number: SI1016X
• Description: Complementary N and P-Channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

V
Document Number: 71168
S-03104—Rev. A, 08-Feb-01
GS
= 5 thru 3 V
1.0
0.8
0.6
0.4
0.2
0.0
4.0
3.2
2.4
1.6
0.8
0.0
5
4
3
2
1
0
0.0
0.0
0
0.2
0.5
V
I
200
D
V
DS
= 250 mA
DS
0.4
On-Resistance vs. Drain Current
= 10 V
Output Characteristics
– Drain-to-Source Voltage (V)
1.0
V
Q
GS
0.6
g
400
I
D
V
= 1.8 V
– Total Gate Charge (nC)
GS
– Drain Current (mA)
Gate Charge
1.5
= 2.5 V
0.8
600
1.0
2.0
1.2
V
GS
800
2.5
= 4.5 V
2.5 V
1.8 V
1.4
2 V
1000
3.0
1.6
_
New Product
1000
800
600
400
200
120
100
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
0
0
–50
0.0
0
C
rss
On-Resistance vs. Junction Temperature
V
–25
GS
0.5
Transfer Characteristics
4
– Gate-to-Source Voltage (V)
T
V
C
J
DS
oss
– Junction Temperature (_C)
0
C
1.0
iss
– Drain-to-Source Voltage (V)
Capacitance
8
25
Vishay Siliconix
1.5
T
V
I
D
J
25_C
GS
= –55_C
= 350 mA
50
= 4.5 V
12
2.0
V
f = 1 MHz
75
GS
V
I
D
Si1016X
GS
= 150 mA
= 0 V
16
www.vishay.com
= 1.8 V
125_C
2.5
100
125
3.0
20
5