BUK581-60A Philips Semiconductors, BUK581-60A Datasheet - Page 4

• Manufacturer Part Number: BUK581-60A
• Description: PowerMOS transistor Logic level FET
• Manufacturer: Philips Semiconductors

Philips Semiconductors
October 1995
PowerMOS transistor
Logic level FET
Fig.9. Normalised drain-source on-state resistance.
a = R
I
D
Fig.8. Typical transconductance, T
1.5
1.0
0.5
= f(V
0
Fig.7. Typical transfer characteristics.
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
-60 -40 -20
DS(ON)
5
4
3
2
1
0
a
3
2
1
0
GS
0
0
g
ID / A
gfs / S
) ; conditions: V
fs
/R
= f(I
DS(ON)25 ˚C
1
1
D
); conditions: V
0
20
= f(T
2
2
VGS / V
Tj / C
ID / A
40
DS
Tj / C = 25
j
); I
Normalised RDS(ON) = f(Tj)
= 25 V; parameter T
60
3
D
3
= 1.5 A; V
DS
80 100 120 140
BUK581-60A
= 25 V
BUK581-60A
4
4
j
= 25 ˚C .
150
GS
5
5
= 5 V
j
4
V
GS(TO)
Fig.12. Typical capacitances, C
1E-02
1E-03
1E-04
1E-05
1E-06
1E-07
I
C = f(V
1000
D
2
1
0
100
10
-60
= f(V
VGS(TO) / V
Fig.11. Sub-threshold drain current.
0
C / pF
= f(T
0
ID / A
Fig.10. Gate threshold voltage.
-40
GS
DS
); conditions: T
); conditions: V
j
-20
); conditions: I
0.4
10
0
SUB-THRESHOLD CONDUCTION SIZE 1
0.8
20
2 %
20
max.
typ.
min.
VDS / V
40
VGS / V
Tj / C
1.2
D
j
GS
60
= 25 ˚C; V
= 0.1 mA; V
typ
= 0 V; f = 1 MHz
30
Product Specification
80
1.6
BUK581-60A
100 120 140
iss
98 %
, C
BUK581-60A
40
DS
2
oss
DS
= V
Ciss
Coss
Crss
, C
Rev 1.100
= V
GS
2.4
rss
.
GS