BUK581-60A Philips Semiconductors, BUK581-60A Datasheet - Page 5

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BUK581-60A

Manufacturer Part Number
BUK581-60A
Description
PowerMOS transistor Logic level FET
Manufacturer
Philips Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK581-60A
Manufacturer:
NXP
Quantity:
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Part Number:
BUK581-60A 1.5A
Manufacturer:
NXP
Quantity:
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Philips Semiconductors
October 1995
PowerMOS transistor
Logic level FET
Fig.13. Typical turn-on gate-charge characteristics.
V
I
GS
F
10
= f(V
9
8
7
6
5
4
3
2
1
0
= f(Q
Fig.14. Typical reverse diode current.
5
4
3
2
1
0
0
VGS / V
0
IF / A
SDS
G
); conditions: I
); conditions: V
2
VDS / V =12
0.5
Tj / C = 150
4
VSDS / V
QG / nC
D
= 1.5 A; parameter V
GS
= 0 V; parameter T
6
48
1
BUK581-60A
25
BUK581-60A
8
1.5
10
DS
j
5
VGS
0
Fig.15. Normalised avalanche energy rating.
120
110
100
90
80
70
60
50
40
30
20
10
0
Fig.16. Avalanche energy test circuit.
W
20
WDSS%
DSS
W
DSS
% = f(T
RGS
40
0.5 LI
amb
60
); conditions: I
D
2
BV
Tamb/ C
80
Normalised Avalanche Energy
DSS
L
VDS
100
BV
T.U.T.
Product Specification
DSS
BUK581-60A
D
120
shunt
= 1.5 A
R 01
V
DD
-
+
140
Rev 1.100
-ID/100
VDD

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