HAT2240C Renesas Technology, HAT2240C Datasheet

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HAT2240C

Manufacturer Part Number
HAT2240C
Description
Silicon N Channel MOS FET Power Switching
Manufacturer
Renesas Technology
Datasheet
www.DataSheet4U.com
HAT2240C
Silicon N Channel MOS FET
Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Rev.4.00 Apr 05, 2006 page 1 of 6
Low on-resistance
R
Low drive current
High density mounting
2.5 V gate drive device
DS(on)
2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm)
= 75 m typ.(at V
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
10 s, duty cycle
Item
GS
= 4.5 V)
Indexband
1%
6
5
4
1
2
I
3
D (pulse)
Pch
Symbol
V
V
Tstg
Tch
I
DSS
GSS
I
DR
D
Note2
Note1
G
6
2
D
D
–55 to +150
3
Ratings
D
4
900
150
2.5
2.5
S
60
10
D
5
1
12
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
REJ03G1241-0400
Unit
Apr 05, 2006
mW
V
V
A
A
A
C
C
(Ta = 25°C)
Rev.4.00

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HAT2240C Summary of contents

Page 1

... HAT2240C Silicon N Channel MOS FET Power Switching Features Low on-resistance typ.(at V DS(on) Low drive current High density mounting 2.5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage ...

Page 2

... HAT2240C Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Drain to source leak current Gate to source cutoff voltage Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time ...

Page 3

... HAT2240C Main Characteristics Power vs. Temperature Derating 1.6 Test condition. When using the glass epoxy board. (FR4 1.6 mm) 1.2 0.8 0 100 Ambient Temperature Ta (°C) Typical Output Characteristics 10 2.2 V 2 Drain to Source Voltage V Drain to Source Saturation Voltage vs. Gate to Source Voltage ...

Page 4

... HAT2240C Static Drain to Source on State Resistance vs. Temperature 200 160 0.5 A, 1.3 A, 2.5 A 120 0.5 A, 1 – Case Temperature Dynamic Input Characteristics 2 Gate Charge Qg (nC) Reverse Drain Current vs. Source to Drain Voltage ...

Page 5

... HAT2240C Switching Time Test Circuit Vin Monitor D.U.T. 4.7 Vin 4.5 V Rev.4.00 Apr 05, 2006 page Vout Monitor Vin R L Vout d(on) Waveform 90% 10% 10% 10% 90% 90% t d(off ...

Page 6

... A-A Section Ordering Information Part Name HAT2240C-EL-E Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Apr 05, 2006 page RENESAS Code Previous Code MASS[Typ.] PWSF0006JA-A CMFPAK-6 / CMFPAK-6V ...

Page 7

... Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use ...

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