HAT2240C Renesas Technology, HAT2240C Datasheet - Page 2

• Manufacturer Part Number: HAT2240C
• Description: Silicon N Channel MOS FET Power Switching
• Manufacturer: Renesas Technology

HAT2240C
Electrical Characteristics
Notes: 3. Pulse test
Rev.4.00 Apr 05, 2006 page 2 of 6
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body - drain diode forward voltage
Item
Symbol
V
V
V
R
R
td(on)
td(off)
Coss
(BR)DSS
(BR)GSS
Crss
Ciss
|yfs|
Qgs
Qgd
I
I
V
GS(off)
DS(on)
DS(on)
Qg
GSS
DSS
tr
tf
DF
Min
0.4
3.3
60
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
12
Typ
590
1.2
1.4
0.8
75
85
60
35
17
50
41
—
—
—
—
5
4
6
Max
119
1.4
1.1
98
—
—
—
—
—
—
—
—
—
—
—
—
10
1
Unit
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
S
V
A
A
I
I
V
V
V
I
I
I
V
f = 1 MHz
I
V
R
V
I
I
D
G
D
D
D
D
D
F
GS
DS
DS
DS
GS
DD
L
= 2.5 A, V
= 10 mA, V
= 100 A, V
= 1.3 A, V
= 1.3 A, V
= 1.3 A, V
= 1.3 A
= 2.5 A
= 7.7 , Rg = 4.7
= 60 V, V
= 10 V, I
= 10 V, V
= 10 V, V
= 10 V, V
= 4.5 V, V
Test conditions
GS
GS
GS
DS
D
GS
GS
GS
GS
DD
= 1 mA
DS
= 10 V
= 0
= 4.5 V
= 2.5 V
DS
= 0
= 0
= 0,
= 4.5 V
= 10 V
= 0
= 0
Note3
(Ta = 25°C)
Note3
Note3
Note3