HAT2240C Renesas Technology, HAT2240C Datasheet - Page 3

• Manufacturer Part Number: HAT2240C
• Description: Silicon N Channel MOS FET Power Switching
• Manufacturer: Renesas Technology

HAT2240C
Main Characteristics
Rev.4.00 Apr 05, 2006 page 3 of 6
400
300
200
100
1.6
1.2
0.8
0.4
10
8
6
4
2
0
0
Drain to Source Saturation Voltage vs.
0
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm)
Drain to Source Voltage V
Gate to Source Voltage V
Power vs. Temperature Derating
Ambient
Typical Output Characteristics
10 V
2.5 V
2.2 V
Gate to Source Voltage
2
2
50
Temperature Ta (°C)
4
4
100
2.1 V
6
6
Pulse Test
Pulse Test
150
I
V
D
GS
8
8
= 2.5 A
GS
DS
1.3 A
1.6 V
1.5 V
0.5 A
1.9 V
1.8 V
1.7 V
= 0 V
2 V
(V)
(V)
200
10
10
1000
0.001
0.01
100
Static Drain to Source on State Resistance
100
0.1
10
10
10
8
6
4
2
1
0
0.1
Gate to Source Voltage V
When using the FR4 board.
1 shot pulse, Ta = 25°C
Typical Transfer Characteristics
Maximum Safe Operation Area
Drain Source Voltage V
Operation in this area is
limited by R
0.01
1
Drain Current I
vs. Drain Current
1
2
0.1
DS(on)
V
GS
Tc = 75°C
25°C
–25°C
= 4.5 V
3
2.5 V
1
10
D
V
Pulse Test
Pulse Test
DS
(A)
= 10 V
DS
GS
4
10
10 µs
(V)
(V)
100
5
100