BF1205 Philips Semiconductors, BF1205 Datasheet - Page 2

• Manufacturer Part Number: BF1205
• Description: Dual N-channel dual gate MOS-FET
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
The BF1205 is a combination of two equal dual gate
MOS-FET amplifiers with shared source and gate 2 leads
and an integrated switch. The integrated switch is
operated by the gate 1 bias of amplifier b. The source and
substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross-modulation
performance during AGC. Integrated diodes between the
gates and source protect against excessive input voltage
surges. The transistor is encapsulated in SOT363
micro-miniature plastic package.
ORDERING INFORMATION
2003 Sep 30
BF1205
TYPE NUMBER
Two low noise gain controlled amplifiers in a single
package. One with a fully integrated bias and one with a
partly integrated bias
Internal switch reduces the number of external
components
Superior cross-modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance
ratio.
Gain controlled low noise amplifiers for VHF and UHF
applications with 5 V supply voltage, such as digital and
analog television tuners and professional
communications equipment.
Dual N-channel dual gate MOS-FET
NAME
Plastic surface mounted package; 6 leads
2
PINNING - SOT363
handbook, halfpage
DESCRIPTION
PACKAGE
Marking code: L4-.
6
1
PIN
Top view
1
2
3
4
5
6
Fig.1 Simplified outline and symbol.
5
2
4
3
gate 1 (a)
gate 2
gate 1 (b)
drain (b)
source
drain (a)
g1 (a)
d (a)
AMP
a
DESCRIPTION
Product specification
g2
s
BF1205
g1 (b)
VERSION
d (b)
AMP
SOT363
b
MGX429