BF1205 Philips Semiconductors, BF1205 Datasheet - Page 4

• Manufacturer Part Number: BF1205
• Description: Dual N-channel dual gate MOS-FET
• Manufacturer: Philips Semiconductors

Philips Semiconductors
STATIC CHARACTERISTICS
T
Note
1. R
2. R
2003 Sep 30
handbook, halfpage
V
V
V
V
V
V
V
I
I
I
j
DSX
G1-S
G2-S
SYMBOL
(BR)DSS
(BR)G1-SS
(BR)G2-SS
(F)S-G1
(F)S-G2
G1-S(th)
G2-S(th)
= 25 C; per MOS-FET; unless otherwise specified.
Dual N-channel dual gate MOS-FET
(mW)
P tot
G1
G1
250
200
150
100
50
0
connects gate 1 (b) to V
connects gate 1 (b) to V
0
drain-source breakdown voltage
gate-source breakdown voltage
gate-source breakdown voltage
forward source-gate voltage
forward source-gate voltage
gate-source threshold voltage
gate-source threshold voltage
drain-source current
gate cut-off current
gate cut-off current
Fig.2 Power derating curve.
50
PARAMETER
100
GG
GG
= 0 V (see Fig.4).
= 5 V (see Fig.4).
150
T s ( C)
MGS359
200
amp. a: V
amp. b: V
V
V
V
V
V
V
amp. a: V
R
amp. b: V
R
amp. a: V
amp. b: V
V
GS
GS
G2-S
G1-S
DS
DS
G2-S
G1
G1
= 5 V; V
= 5 V; V
= 150 k ; note 1
= 150 k ; note 2
= V
= V
4
= V
= V
= 4 V; V
DS
DS
G1-S
G1-S
DS
DS
G2-S
G2-S
G1-S
G1-S
= 0 V; I
= 0 V; I
= 0 V; I
= 0 V; I
G2-S
G1-S
CONDITIONS
G1-S
= V
= V
= 4 V; V
= 4 V; V
= 5 V; V
= 5 V; V
= 4 V; I
= 5 V; I
G2-S
G2-S
G1-S
G2-S
= V
S-G1
S-G2
= 0 V; I
= 0 V; I
DS
DS
G2-S
G2-S
DS
= 10 mA
= 10 mA
= 10 mA
= 10 mA
D
D
= 5 V;
= 5 V;
= 0 V
= 100 A
= 100 A
= V
= V
D
D
DS
DS
= 10 A 10
= 10 A 7
= 0 V
= 0 V
6
6
0.5
0.5
0.3
0.4
8
8
MIN.
Product specification
10
10
1.5
1.5
1
1.0
16
16
50
50
20
MAX.
BF1205
V
V
V
V
V
V
V
V
mA
mA
nA
nA
nA
UNIT