BF1205 Philips Semiconductors, BF1205 Datasheet - Page 6

• Manufacturer Part Number: BF1205
• Description: Dual N-channel dual gate MOS-FET
• Manufacturer: Philips Semiconductors

Philips Semiconductors
DYNAMIC CHARACTERISTICS AMPLIFIER a
Common source; T
Notes
1. For the MOS-FET not in use: V
2. Measured in Fig.13 test circuit.
2003 Sep 30
C
C
C
C
G
NF
X
SYMBOL
y
mod
ig1-ss
ig2-ss
oss
rss
Dual N-channel dual gate MOS-FET
tr
fs
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
reverse transfer capacitance
power gain
noise figure
cross-modulation
amb
PARAMETER
= 25 C; V
G2-S
G1-S
= 4 V; V
(b) = 0 V; V
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 200 MHz; G
G
f = 400 MHz; G
G
f = 800 MHz; G
G
f = 10.7 MHz; G
f = 400 MHz; Y
f = 800 MHz; Y
input level for k = 1% at 0 dB AGC;
f
input level for k = 1% at 10 dB AGC;
f
input level for k = 1% at 40 dB AGC;
f
DS
w
w
w
j
L
L
L
= 25 C
= 50 MHz; f
= 50 MHz; f
= 50 MHz; f
= 5 V; I
= 0.5 mS; B
= 1 mS; B
= 1 mS; B
DS
(b) = 0 V.
D
= 12 mA; note 1
CONDITIONS
6
L
L
unw
unw
unw
= B
= B
S
S
S
L
S
S
S
= B
= Y
= Y
= 3.3 mS; B
= 2 mS; B
= 2 mS; B
= 20 mS; B
= 60 MHz; note 2
= 60 MHz; note 2
= 60 MHz; note 2
L(opt)
L(opt)
L(opt)
S(opt)
S(opt)
S
S
S
= B
= B
S
= B
= 0
S(opt)
S(opt)
S(opt)
;
;
;
26
31
27
22
90
98
MIN.
31
1.8
3.3
0.75
20
35
31
26
4
1.1
1.2
90
102
TYP.
Product specification
40
2.3
39
35
30
1.7
1.9
BF1205
MAX.
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
dB V
dB V
dB V
UNIT