BLF0810S-90 Philips Semiconductors, BLF0810S-90 Datasheet - Page 3

• Manufacturer Part Number: BLF0810S-90
• Description: Base station LDMOS transistors
• Manufacturer: Philips Semiconductors

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Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Notes
1. Thermal resistance is determined under RF operating conditions.
2. Depending on mounting condition in application.
CHARACTERISTICS
T
2003 Jun 12
V
V
T
T
R
R
V
V
I
I
I
g
R
j
SYMBOL
SYMBOL
SYMBOL
DSS
DSX
GSS
fs
stg
j
DS
GS
= 25 C unless otherwise specified.
(BR)DSS
GSth
Base station LDMOS transistors
th j-c
th j-hs
DSon
drain-source voltage
gate-source voltage
storage temperature
junction temperature
thermal resistance from junction to case
thermal resistance from heatsink to junction T
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
gate leakage current
forward transconductance
drain-source on-state resistance
PARAMETER
PARAMETER
PARAMETER
V
V
V
V
V
V
V
GS
DS
GS
GS
GS
DS
GS
= 10 V; I
= 10 V; I
= 0; I
= 0; V
= V
= 20 V; V
= 9 V; I
3
T
GSth
CONDITIONS
h
h
D
DS
= 25 C, P
= 25 C, P
= 3 mA
D
+ 9 V; V
D
D
= 36 V
= 10 A
= 300 mA
= 10 A
DS
= 0
CONDITIONS
DS
L
L
= 35 W (AV), note 1
= 35 W (AV), note 2
BLF0810-90; BLF0810S-90
= 10 V
4
24
75
MIN.
65
MIN.
4.4
120
TYP.
75
150
200
Product specification
15
VALUE
MAX.
1.3
1
5
1.5
0.5
MAX.
V
V
C
C
UNIT
UNIT
K/W
K/W
V
V
A
S
m
UNIT
A
A