BLF0810S-90 Philips Semiconductors, BLF0810S-90 Datasheet - Page 5

• Manufacturer Part Number: BLF0810S-90
• Description: Base station LDMOS transistors
• Manufacturer: Philips Semiconductors

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Philips Semiconductors
2003 Jun 12
handbook, halfpage
handbook, halfpage
Base station LDMOS transistors
V
Fig.5
V
measured under CDMA conditions; test signal standard IS-95.
Fig.7
(dBc)
DS
DS
(dB)
d 5
G p
= 27 V; f
= 27 V; I
20
40
60
80
20
15
10
0
5
0
20
0
I DQ = 600 mA
Fifth order intermodulation distortion as a
function of peak envelope power; typical
values.
Power gain and drain efficiency as functions
of average load power; typical values.
1
DQ
= 890.0 MHz; f
= 560 mA; f = 890 MHz.
500 mA
450 mA
400 mA
20
30
40
2
G p
= 890.1 MHz.
D
60
40
P L (AV)(dBm)
P L (PEP) (W)
80
MDB172
MDB174
100
50
40
30
20
10
0
(%)
D
5
handbook, halfpage
handbook, halfpage
V
Fig.6
V
measured under CDMA conditions; test signal standard IS-95.
Fig.8
(dBc)
ACPR
DS
DS
d 7
(dB)
= 27 V; f
= 27 V; I
20
40
60
80
20
40
60
80
0
0
20
0
Seventh order intermodulation distortion as
a function of peak envelope power; typical
values.
ACPR as a function of average load power;
typical values.
I DQ = 600 mA
1
DQ
BLF0810-90; BLF0810S-90
= 890.0 MHz; f
= 560 mA; f = 890 MHz.
20
500 mA
450 mA
400 mA
30
40
2
= 890.1 MHz.
60
40
Product specification
P L (AV)(dBm)
P L (PEP) (W)
80
1.98 MHz
750 kHz
MDB173
MDB175
100
50