BLF0810S-90 Philips Semiconductors, BLF0810S-90 Datasheet - Page 6

• Manufacturer Part Number: BLF0810S-90
• Description: Base station LDMOS transistors
• Manufacturer: Philips Semiconductors

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Philips Semiconductors
2003 Jun 12
handbook, halfpage
handbook, halfpage
Fig.9
Base station LDMOS transistors
Class-AB operation; V
Values comprised for different parameters.
( )
Z I
2
1
0
1
2
Fig.11 Definition of transistor impedance.
0.8
Input impedance as a function of frequency
(series components); typical values.
x i
r i
0.85
Z IN
DS
gate
= 27 V; I
0.9
DQ
= 560 mA; P
drain
MGS998
Z L
0.95
L
f (GHz)
= 18 W.
MDB176
1
6
handbook, halfpage
Fig.10 Input impedance as a function of frequency
Class-AB operation; V
Values comprised for different parameters.
( )
Z L
2
1
0
1
2
0.8
(series components); typical values.
BLF0810-90; BLF0810S-90
0.85
DS
= 27 V; I
0.9
DQ
R L
X L
= 560 mA; P
Product specification
0.95
L
f (GHz)
= 18 W.
MDB177
1