BLF2022-90 Philips Semiconductors, BLF2022-90 Datasheet - Page 2

• Manufacturer Part Number: BLF2022-90
• Description: UHF power LDMOS transistor
• Manufacturer: Philips Semiconductors

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Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
90 W LDMOS power transistor for base station
applications at frequencies from 2000 to 2200 MHz.
QUICK REFERENCE DATA
Typical RF performance at T
2003 Feb 24
2-tone, class-AB
W-CDMA, 3GPP test
model 1, 64 channels
with 66% clipping
MODE OF OPERATION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
Typical W-CDMA performance at a supply voltage of
28 V and I
– Output power = 11.5 W (AV)
– Gain = 12.5 dB
– Efficiency = 20%
– ACPR = 42 dBc at 3.84 MHz
– d
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (2000 to 2200 MHz)
Internally matched for ease of use.
RF power amplifiers for W-CDMA base stations and
multicarrier applications in the 2000 to 2200 MHz
frequency range.
UHF power LDMOS transistor
im
= 36 dBc
DQ
of 750 mA:
f
1
h
= 2170; f
= 25 C in a common source class-AB test circuit.
(MHz)
2140
f
2
= 2170.1
V
(V)
28
28
CAUTION
DS
2
PINNING - SOT502A
handbook, halfpage
(mA)
750
750
I
DQ
PIN
1
2
3
90 (PEP)
15 (AV)
(W)
P
L
Fig.1 Simplified outline.
Top view
drain
gate
source, connected to flange
(dB)
12.8
13.2
G
p
1
2
DESCRIPTION
35.7
(%)
20
D
Product specification
BLF2022-90
MBK394
3
(dBc)
d
28.5
im
ACLR
(dBc)
40
5