BLF2022-90 Philips Semiconductors, BLF2022-90 Datasheet - Page 6

• Manufacturer Part Number: BLF2022-90
• Description: UHF power LDMOS transistor
• Manufacturer: Philips Semiconductors

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Philips Semiconductors
2003 Feb 24
handbook, halfpage
handbook, full pagewidth
UHF power LDMOS transistor
V
Fig.8
input
50
DS
( )
Z i
= 28 V; I
4
3
2
1
0
1.8
Input impedance as a function of frequency
(series components); typical values.
D
= 750 mA; P
L20
1.9
x i
r i
C3
L1
C4
L
2
= 90 W; T
L2
L3
C2
2.1
h
L5
L4
= 25 C.
R1
L6
C1
Fig.10 Class-AB test circuit at f = 2.2 GHz.
L7
2.2
f (GHz)
C5
L8
MLD835
L9
V gate
2.3
L10
6
handbook, halfpage
L11
V
Fig.9
DS
( )
L12
Z L
= 28 V; I
L13
4
2
0
2
4
1.8
Load impedance as a function of frequency
(series components); typical values.
D
L14
= 750 mA; P
1.9
C10
L15
C9
C6
L16
C11
L
2
= 90 W; T
L17
L18
C7
C12
2.1
C8
h
F1
R2
= 25 C.
L19
BLF2022-90
Product specification
2.2
MGS920
C13
R L
X L
f (GHz)
MLD836
output
50
2.3
C14
V DD