BLF2022-90 Philips Semiconductors, BLF2022-90 Datasheet - Page 5

• Manufacturer Part Number: BLF2022-90
• Description: UHF power LDMOS transistor
• Manufacturer: Philips Semiconductors

www.DataSheet4U.com
Philips Semiconductors
2003 Feb 24
handbook, halfpage
UHF power LDMOS transistor
Single carrier W-CDMA performance.
V
Input signal: 3GPP W-CDMA 1-64DPCH with 66% clipping;
peak to average power ratio: 8.5 dB at 0.01% probability on
CCDF; channel spacing/bandwidth = 5 MHz / 3.84 MHz.
Measured in a W-CDMA application circuit.
Fig.6
DS
(dB)
G p
= 28 V; I
15
10
5
0
25
Power gain and drain efficiency as functions
of average load power; typical values.
DQ
= 750 mA; T
30
G p
D
h
= 25 C; f = 2140 MHz.
35
40
P L(AV) (dBm)
MLD833
45
30
20
10
0
(%)
D
5
handbook, halfpage
Single carrier W-CDMA performance.
V
Input signal: 3GPP W-CDMA 1-64DPCH with 66% clipping;
peak to average power ratio: 8.5 dB at 0.01% probability on
CCDF; channel spacing/bandwidth = 5 MHz / 3.84 MHz.
Measured in a W-CDMA application circuit.
Fig.7
ACLR
(dBc)
DS
= 28 V; I
20
40
60
80
0
25
Adjacent channel leakage ratio (ACLR
ACLR
typical values.
DQ
= 750 mA; T
10
30
) as function of average load power;
ACLR 10
ACLR 5
h
= 25 C; f = 2140 MHz.
35
BLF2022-90
Product specification
40
P L(AV) (dBm)
MLD834
45
5
and