BLF6G22S-45 NXP Semiconductors, BLF6G22S-45 Datasheet - Page 4

• Manufacturer Part Number: BLF6G22S-45
• Description: Power LDMOS transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G22S-45_2
Product data sheet
Fig 2.
(dB)
G
p
20
19
18
17
16
15
14
V
f
Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
0
2
DS
= 2170.1 MHz.
= 28 V; I
10
G
D
p
20
Dq
= 405 mA; f
Fig 1.
30
40
1
V
One-tone CW power gain and drain efficiency as functions of load power; typical
values
= 2170 MHz;
DS
50
= 28 V; I
P
L(PEP)
001aah605
60
Dq
(W)
(dB)
G
= 405 mA; f = 2170 MHz.
70
p
Rev. 02 — 17 April 2008
22
20
18
16
14
12
60
50
40
30
20
10
0
(%)
0
D
10
Fig 3.
20
(dBc)
IMD
10
20
30
40
50
60
70
0
V
f
Intermodulation distortion as a function of
peak envelope load power; typical values
2
30
DS
= 2170.1 MHz.
= 28 V; I
10
40
20
Dq
= 405 mA; f
50
001aah604
P
G
30
D
L
p
(W)
BLF6G22S-45
60
Power LDMOS transistor
40
60
50
40
30
20
10
(%)
1
D
= 2170 MHz;
50
IMD3
IMD5
IMD7
P
© NXP B.V. 2008. All rights reserved.
L(PEP)
001aah606
www.DataSheet4U.com
60
(W)
70
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