BLF6G22S-45 NXP Semiconductors, BLF6G22S-45 Datasheet - Page 6

no-image

BLF6G22S-45

Manufacturer Part Number
BLF6G22S-45
Description
Power LDMOS transistor
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
BLF6G22S-45_2
Product data sheet
Table 8.
For test circuit, see
[1]
[2]
Component
C1, C2, C17, C18
C3, C15
C4, C5
C6, C12
C7
C8
C9
C10, C11
C13
C14
C16
R1
Fig 7.
American technical ceramics type 100A or capacitor of same quality.
American technical ceramics type 100B or capacitor of same quality.
C3
Striplines are on a double copper-clad Rogers Duroid 5880 Printed-Circuit Board (PCB) with
See
Component layout for 2110 MHz and 2170 MHz test circuit
r
List of components
= 2.2 and thickness = 0.79 mm.
C4
C2
C1
Table 8
C5
Figure 6
R1
for list of components.
Description
multilayer ceramic chip capacitor
tantalum capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
chip resistor
Rev. 02 — 17 April 2008
C6
and
C7
Figure
7.
Value
6.8 pF
10 F
1.5 F
10 pF
0.5 pF
1.2 pF
1.0 pF
100 nF
220 nF
4.7 F
220 F, 63 V
5.6
BLF6G22S-45
C8
Power LDMOS transistor
C10
C11
C12
© NXP B.V. 2008. All rights reserved.
C13
C9
C16
www.DataSheet4U.com
[1]
[2]
[2]
[2]
[2]
C14
Remarks
C15
001aah610
C18
C17
6 of 10

Related parts for BLF6G22S-45