MX28F640C3T Macronix International, MX28F640C3T Datasheet

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MX28F640C3T

Manufacturer Part Number
MX28F640C3T
Description
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
Manufacturer
Macronix International
Datasheet
FEATURES
• Bit Organization: 4,194,304 x 16
• Single power supply operation
• Fast access time : 90/120ns
• Low power consumption
• Sector architecture
• Auto Erase (chip & sector) and Auto Program
GENERAL DESCRIPTION
The MX28F640C3T/B is a 64-mega bit Flash memory
organized as 4M words of 16 bits. The 1M word of data
is arranged in eight 4Kword boot and parameter sectors,
and 127 32Kword main sector which are individually
erasable. MXIC's Flash memories offer the most cost-
effective and reliable read/write non-volatile random ac-
cess memory. The MX28F640C3T/B is packaged in 48-
pin TSOP and 48-ball CSP. It is designed to be repro-
grammed and erased in system or in standard EPROM
programmers.
The standard MX28F640C3T/B offers access time as
P/N:PM0900
- 3.0V only operation for read, erase and program
operation
- VCC=VCCQ=2.7~3.6V
- Operating temperature:-40° C~85° C
- 9mA maximum active read current, f=5MHz (CMOS
input)
- 21mA program erase current maximum
(VPP=1.65~3.6V)
- 7uA typical standby current under power saving
mode
- Sector Erase (Sector structure : 4Kword x 2 (boot
sectors), 4Kword x 6 (parameter sectors), 32Kword x
127 (parameter sectors)
- Top/Bottom Boot
- Automatically program and verify data at specified
address
1
MX28F640C3T/B
• Automatic Suspend Enhance
• Automatic sector erase, full chip erase, word write and
• Status Reply
• Data Protection Performance
• 100,000 minimum erase/program cycles
• Common Flash Interface (CFI)
• 128-bit Protection Register
• Latch-up protected to 100mA from -1V to VCC+1V
• Package type:
fast as 90ns, allowing operation of high-speed micropro-
cessors without wait states.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX28F640C3T/B uses a command register to manage
this functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
64M-BIT [4M x16] CMOS SINGLE VOLTAGE
- Word write suspend to read
- Sector erase suspend to word write
- Sector erase suspend to read register report
sector lock/unlock configuration
- Detection of program and erase operation comple-
tion.
- Command User Interface (CUI)
- Status Register (SR)
- Include boot sectors and parameter and main sectors
to be block/unblock
- 64-bit Unique Device Identifier
- 64-bit User-Programmable
- 48-pin TSOP (12mm x 20mm)
- 48-ball CSP (11mm x 12mm)
ADVANCED INFORMATION
3V ONLY FLASH MEMORY
www.DataSheet4U.com
REV. 0.6, AUG. 20, 2003

Related parts for MX28F640C3T

MX28F640C3T Summary of contents

Page 1

... Auto Erase (chip & sector) and Auto Program - Automatically program and verify data at specified address GENERAL DESCRIPTION The MX28F640C3T 64-mega bit Flash memory organized as 4M words of 16 bits. The 1M word of data is arranged in eight 4Kword boot and parameter sectors, and 127 32Kword main sector which are individually erasable ...

Page 2

... In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cy- cling. The MX28F640C3T/B uses a 2.7V~3.6V VCC sup- ply to perform the High Reliability Erase and auto Pro- gram/Erase algorithms. The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process ...

Page 3

... BLOCK DIAGRAM Y Input A0~A21 Decoder Buffer Address X Latch Decoder Address Counter P/N:PM0900 MX28F640C3T/B Q0~Q7 Output Input Buffer Buffer Identifier Register Status Register Data Comparator Y-Gating 32K-Word Main Sector x127 ....... 3 www.DataSheet4U.com I/O VCC Logic CE WE Command User OE Interface RESET WP Write State VPP Program/Erase Machine ...

Page 4

... Ball CSP ( mm) Top View, Ball Down (Ball Pitch=0.75mm, Ball Width=0.35mm A13 A11 B1 B2 A14 A10 C1 C2 A15 A12 D1 D2 A16 Q14 E1 E2 VCCQ Q15 F1 F2 GND Q7 P/N:PM0900 MX28F640C3T/B MX28F640C3T VPP WP A19 RESET A18 A17 A21 A20 ...

Page 5

... VIH, locked boot sectors cannot be written or erase not affected parameter and main sectors. VCC supply Device power supply: (2.7V~3.6V). VCCQ input I/O Power Supply: supplies for input/output buffers. [2.7V~3.6V] This input should be tied directly to VCC. GND supply Ground voltage: all the GND pin shall not be connected. P/N:PM0900 MX28F640C3T/B 5 www.DataSheet4U.com REV. 0.6, AUG. 20, 2003 ...

Page 6

... Word Main Sector 26 32K Word Main Sector 27 32K Word Main Sector 28 32K Word Main Sector 29 32K Word Main Sector 30 32K Word P/N:PM0900 MX28F640C3T/B Sector Main Sector 31 Main Sector 32 3FF000-3FFFFF Main Sector 33 3FE000-3FEFFF Main Sector 34 3FD000-3FDFFF Main Sector 35 3FC000-3FCFFF Main Sector 36 ...

Page 7

... Word Main Sector 107 32K Word Main Sector 108 32K Word Main Sector 109 32K Word Main Sector 110 32K Word P/N:PM0900 MX28F640C3T/B Address Range (h) Sector 1B8000-1BFFFF Main Sector 111 1B0000-1B7FFF Main Sector 112 1A8000-1AFFFF Main Sector 113 1A0000-1A7FFF Main Sector 114 ...

Page 8

... Word Main Sector 26 32K Word Main Sector 27 32K Word Main Sector 28 32K Word Main Sector 29 32K Word Main Sector 30 32K Word P/N:PM0900 MX28F640C3T/B Sector Main Sector 31 Main Sector 32 000000-000FFF Main Sector 33 001000-001FFF Main Sector 34 002000-002FFF Main Sector 35 003000-003FFF Main Sector 36 ...

Page 9

... Word Main Sector 107 32K Word Main Sector 108 32K Word Main Sector 109 32K Word Main Sector 110 32K Word P/N:PM0900 MX28F640C3T/B Sector 240000-247FFF Main Sector 111 248000-24FFFF Main Sector 112 250000-257FFF Main Sector 113 258000-25FFFF Main Sector 114 ...

Page 10

... P/N:PM0900 MX28F640C3T/B 3 BUS OPERATION The local CPU reads and writes flash memory in-sys- tem. All bus cycles to or from the flash memory conform to standard microprocessor bus cycles. ...

Page 11

... The Word Write command requires the command and address of the location to be written. Set Sector lock/unlock com- P/N:PM0900 MX28F640C3T/B mands require the command and address within the de- vice or sector within the device (Sector Lock locked. The Clear Sector Lock-Bits command requires the command and address within the device ...

Page 12

... Refer to DC Characteristics for VPPLK, VPP1, VPP2, VPP3 voltage can be VIL or VIH for pin and addresses. 3. RESET at GND±0.2 to ensure the lowest power consumption. 4. Refer to Table 3 for valid DIN during a write operation program or erase the lockable sectors holds WP at VIH. P/N:PM0900 MX28F640C3T/B RESET CE OE VIH VIL ...

Page 13

... Following the Read configuration codes command, read operation access manufacturer, device codes, sector lock/unlock codes, see chapter 4.2. 5. Either 40H or 10H are recognized by the WSM as word write setup. 6. The sector unlock operation simultaneously clear all sector lock. 7. Read Query Command is read for CFI query information. P/N:PM0900 MX28F640C3T/B Notes First Bus Cycle Operation Address Data (1) ...

Page 14

... Sector is locked-down Protection Register Lock 80 Protection Register 81-88 P/N:PM0900 MX28F640C3T/B 4.3 Read Status Register Command CUI writes read status command (70H). The status reg- ister may be read to determine when a sector erase, word write or lock-bit configuration is complete and whether the operation completed successfully. (refer to table 6) It may be read at any time by writing the Read Status Register command ...

Page 15

... SR.7. When word write is complete, status register bit SR.4 P/N:PM0900 MX28F640C3T/B should be checked. If word write error is detected, the status register should be cleared. The internal WSM verify only detects errors for "1"s that do not successfully write to " ...

Page 16

... Read Status Register and Word Write Resume. After Word Write Resume command is written P/N:PM0900 MX28F640C3T/B to the flash memory, the WSM will continue the Word write process. Status register bits SR.2 and SR.7 will automatically clear. After the Word Write Resume com- mand is written, the device automatically outputs status register data when read (see Figure 4) ...

Page 17

... In addition, sector lock-down is cleared only when the device is reset or powered down. P/N:PM0900 MX28F640C3T/B 4.9.4 Read Sector Lock Status The lock status of every sector can be read through Read Configuration mode. To enter this mode first com- mand write 90H to the device. The next sector reads at address +00002 will output the lock status of this sec- tor ...

Page 18

... Lock-Down Disabled Lock-Down Disabled P/N:PM0900 MX28F640C3T/B sector is being placed in erase suspend, the locking sta- tus bits will be changed immediately, but when the erase is resumed, the erase operation will complete. Locking operation cannot be performed during a program suspend. 4.9.6 Status Register Error Checking The operation of locking system for this device can be used the term " ...

Page 19

... Program Suspended 0 = Program in Progress/Completed SR.1 = SECTOR LOCK STATUS 1 =Program/Erase attempted an a locked sector; operation aborted operation to locked sectors SR.0 = RESERVED FOR FUTURE ENHANCEMENTS (R) P/N:PM0900 MX28F640C3T/B PS VPPS PSS NOTES: Check WSM bit first to determine word program or sec- tor Erase completion, before checking Program or Erase Status bits ...

Page 20

... Error bit SR.4 and Lock Error bit SR.1 will be set to 1). Protection register lockout state is not reversible. P/N:PM0900 MX28F640C3T/B read cycles from addresses shown in Table 7 will re- trieve the specified information. To return to read array mode, write the Read Array Command (FFH). Two-cycle Protection Program Command is used to pro- gram protection register bits ...

Page 21

... COUT Output Capacitance NOTE: 1. Sampled, not 100% tested. P/N:PM0900 MX28F640C3T/B WARNING: Stressing the device beyond the "Absolute Maximum Ratings" may cause permanent damage. These are stress ratings only. Operation beyond the "Operating Conditions" is not recommended and ex- tended exposure beyond the "Operation Conditions" may affect device reliability ...

Page 22

... Note:AC test inputs are driven at VCCQ/2 for a Logic "1" and 0.0V for a Logic "0". Figure 1. Transient Input/Output Reference Waveform Figure 2. SWITCHING TEST CIRCUITS DEVICE UNDER TEST CL 6.2K ohm P/N:PM0900 MX28F640C3T/B TEST POINTS TEST SPECIFICATIONS Test Condition Output Load 2.7K ohm Output Load Capacitance 3.3V ...

Page 23

... Output Hold from Address, CE Change, Whichever Occurs First Notes: 1. See AC Waveform: Read Operations may be delayed up to tELQV-tGLQV after the falling edge of CE without impact on tELQV. 3. Sampled, but not 100% tested. 4. See test Configuration. P/N:PM0900 MX28F640C3T/B -90 Notes Min. Max ...

Page 24

... Addresses(A) VIL VIH CE (E) VIL VIH OE (G) VIL VIH WE (W) VIL VOH High Z DATA (Q) VOL VIH RESET (P) VIL P/N:PM0900 MX28F640C3T/B Device and Data Address Selection Valid Address Stable tAVAV tGLQV tGLQX tELQV tELQX Valid Output tAVQV tPHQV 24 www.DataSheet4U.com Standby tEHQZ tGHQZ ...

Page 25

... Hence, tWP=tWLWH=tELEH=tELWH. Similarly, Write pulse width high (tWPH) is defined from going high (whichever goes high first going low (whichever goes low first). Hence, tWPH=tWHWL=tEHEL=tEHWL. 5. See Test Configuration. 6. Vcc Max = 3.3V. P/N:PM0900 MX28F640C3T/B -90 Note Min. 150 0 ...

Page 26

... A. VCC Power-Up and Standby. B. Write Program or Erase Setup Command. C. Write Valid Address and Data (for Program) or Erase Confirm Command. D. Automated Program or Erase Delay. E. Read Status Register Data (SRD): reflects completed program/erase operation. F. Write Read Array Command. P/N:PM0900 MX28F640C3T AIN AIN tAVWH ...

Page 27

... Main Sector tEHQV3 Erase Time tWHRH1/ Program Suspend Latency tEHRH1 tWHRH2/ Erase Suspend Latency tEHRH2 Notes: 1. Typical values measured at TA=+25°C and nominal voltage. 2. Excludes external system-level overhead. 3. Sampled, but not 100% tested. P/N:PM0900 MX28F640C3T/B Vpp 1.65V-3.6V Note Typ(1) Max 2,3 0.10 0.30 2,3 0.8 2.4 2,3 12 200 2,3 0 ...

Page 28

... If tPLPH is < 100ns the device may still reset but this is not guaranteed RESET is asserted while a sector erase or word program operation is not executing, the reset will complete within 100ns. 4. Sampled, but not 100% tested. P/N:PM0900 MX28F640C3T/B VIH tPHQV VIL tPHWL ...

Page 29

... Output Low Voltage VOH Output High Voltage VPPLK VPP Lock-Out Voltage VPP1 VPP during Program/ Erase Operations VLKO VCC Prog/Erase Lock Voltage VLKO2 VCCQ Prog/Erase Lock Voltage P/N:PM0900 MX28F640C3T/B VCC 2.7V-3.6V Note Typ. Max. Unit Test Conditions 1,2 ± VCC=VCC Max., VCCQ=VCCQ Max. ...

Page 30

... ICCES and ICCR. If the device is read while in program suspend, current draw is the sum of ICCWS and ICCR. 6. Erase and Program are inhibited when VPP<VPPLK and not guaranteed outside the valid VPP ranges of and VPP2. P/N:PM0900 MX28F640C3T/B 30 www.DataSheet4U.com REV. 0.6, AUG. 20, 2003 ...

Page 31

... SR. SR. SR.1= 0 Program Successful P/N:PM0900 MX28F640C3T/B Bus Operation Write Write Read Standby Repeat for subsequent programming operations. SR full status check can be done after each program or after a sequence of program operations. Write FFH after the last program operation to reset device to read array mode. ...

Page 32

... Read Status Register 0 SR. SR.2= Program Completed 1 Write FFH Read Array Data No Done Reading Yes Write D0H Program Write Resumed Read Array Data P/N:PM0900 MX28F640C3T/B Bus Operation Write Write Read Standby Stanby Write Read Write Write FFH 32 www.DataSheet4U.com Command Comments Program Data=B0H ...

Page 33

... SR.4,5= Command Sequence Error 0 1 SR.5= 0 Attempted Erase of Locked 1 SR.1= 0 Sector Erase Successful P/N:PM0900 MX28F640C3T/B Bus Operation Write Write Suspend Read Erase Loop No Yes Standby Repeat for subsequent block erasures. Full status check can be done after each sector erase or after a sequence of sector erasures. ...

Page 34

... Read Status Register 0 SR. SR.6= Erase Completed 1 Write FFH Read Array Data No Done Reading Yes Write D0H Erase Write Resumed Read Array Data P/N:PM0900 MX28F640C3T/B Bus Operation Write Write Read Standby Stanby Write Read Write Write FFH 34 www.DataSheet4U.com Command Comments Erase Data=B0H ...

Page 35

... D0H, or 2FH Write 90H (Read Configuration) Read Sector Lock Status Locking Change Confirmed ? Yes Write FFh (Read Array) Locking Change Complete P/N:PM0900 MX28F640C3T/B Bus Command Operation Write Config. Setup Data=60H Write Lock, unlock Data=01H (Sector Lock) or Lockdown Write Read (Optional) ...

Page 36

... FULL STATUS CHECK PROCEDURE Read Status Register Data(See Above) 1,1 SR.3, SR.4= 0,1 SR.1, SR.4= 1,1 SR.1, SR.4= Program Successful P/N:PM0900 MX28F640C3T/B Bus Operation Write Write Read Standby Protection Program operations can only be addressed within the protection register address space. Addresses outside the defined space will return an error. Repeat for subsequent programming operations. ...

Page 37

... VPP programming voltage can be kept low for the abso- lute hardware protection of all sector in the flash device. As VPP is below VPPLK, any program or erase opera- tion will result in a error, prompting the corresponding status register bit (SR. set. P/N:PM0900 MX28F640C3T/B 37 www.DataSheet4U.com REV. 0.6, AUG. 20, 2003 ...

Page 38

... QUERY COMMAND AND COMMON FLASH INTERFACE (CFI) MODE MX28F640C3T/B is capable of operating in the CFI mode. This mode all the host system to determine the manu- facturer of the device such as operating parameters and configuration. Two commands are required in CFI mode. Query command of CFI mode is placed first, then the Reset command exits CFI mode ...

Page 39

... Bits 2-15 reserved for future use. Undefined bits are 0. VCC Logic Supply Optimum Program/Erase Voltage (highest performance) bits 7-4 BCD value in volts bits 3-0 BCD value in 100mV VPP (Programming) Supply Optimum Program/Erase Voltage bits 7-4 HEX value in volts bits 3-0 BCD value in 100mV P/N:PM0900 MX28F640C3T/B Address ...

Page 40

... ACCESS TIME (ns) MX28F640C3TTC-90 90 MX28F640C3BTC-90 90 MX28F640C3TTC-12 120 MX28F640C3BTC-12 120 MX28F640C3TTI-90 90 MX28F640C3BTI-90 90 MX28F640C3TTI-12 120 MX28F640C3BTI-12 120 MX28F640C3TXAC-90 90 MX28F640C3BXAC-90 90 MX28F640C3TXAC-12 120 MX28F640C3BXAC-12 120 MX28F640C3TXAI-90 90 MX28F640C3BXAI-90 90 MX28F640C3TXAI-12 120 MX28F640C3BXAI-12 120 P/N:PM0900 MX28F640C3T/B OPERATING STANDBY Current MAX.(mA) Current MAX.(uA ...

Page 41

... PACKAGE INFORMATION P/N:PM0900 MX28F640C3T/B 41 www.DataSheet4U.com REV. 0.6, AUG. 20, 2003 ...

Page 42

... P/N:PM0900 MX28F640C3T/B 42 www.DataSheet4U.com REV. 0.6, AUG. 20, 2003 ...

Page 43

... Correct the sector range of sector structure table 4. To modify the locking operation flowchart 5. To correct the CFI table 0 added address definition notes for Top/Bottom boot device of P20 Protection Register Section 0.6 1. Removed VPP fast programming function P/N:PM0900 MX28F640C3T/B Page P1,4 P1,2,26,28,43 JUN/19/2002 P1,4 P22 P25 P44,45 All ...

Page 44

... FAX:+65-348-8096 TAIPEI OFFICE: TEL:+886-2-2509-3300 FAX:+886-2-2509-2200 ACRONIX MERICA, NC. TEL:+1-408-453-8088 FAX:+1-408-453-8488 CHICAGO OFFICE: TEL:+1-847-963-1900 FAX:+1-847-963-1909 http : //www.macronix.com MX28F640C3T O., TD. MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice. www.DataSheet4U.com ...

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