MX28F640C3T Macronix International, MX28F640C3T Datasheet - Page 25

• Manufacturer Part Number: MX28F640C3T
• Description: 64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
• Manufacturer: Macronix International

6.2.5 AC Characteristic -- Write Operation
Notes:
1. Write timing characteristics during erase suspend are the same as during write-only operations.
2. Refer to Table 5 for valid AIN or DIN.
3. Sampled, not 100% tested.
4. Write pulse width (tWP) is defined from CE or WE going low (whichever goes low last) to CE or WE going high
5. See Test Configuration.
6. Vcc Max = 3.3V.
P/N:PM0900
Sym.
tPHWL/tPHEL
tELWL/tWLEL
tELEH/tWLWH
tDVWH/tDVEH
tAVWH/tAVEH
tWHEH/tEHWH CE(WE) Hold Time from WE(CE) High
tWHDX/tEHDX
tWHAX/tEHAX
tWHWL/tEHEL
tVPWH/tVPEH
tQVVL
tBHWH/tBHEH
tQVBL
tWHGL
(whichever goes high first). Hence, tWP=tWLWH=tELEH=tELWH. Similarly, Write pulse width high (tWPH) is
defined from CE or WE going high (whichever goes high first) to CE or WE going low (whichever goes low first).
Hence, tWPH=tWHWL=tEHEL=tEHWL.
Address Hold Time from WE(CE) High
Parameter
WE(CE) Pulse Width
Data Setup to WE(CE) Going High
Address Setup to WE(CE) Going High
Data Hold Time from WE(CE) High
WE(CE) Pulse Width High
VPP Setup to WE(CE) Going High
VPP Hold from Valid SRD
WP Setup to WE(CE) Going High
WP Hold from Valid SRD
WE High to OE Going Low
RESET High Recovery to WE(CE) Going Low
CE(WE) Setup to WE(CE) Going Low
25
MX28F640C3T/B
Note
4
2
2
2
2
4
3
3
3
3
3
Min.
150
200
-90
50
50
50
30
30
0
0
0
0
0
0
0
www.DataSheet4U.com
Min.
-110
150
200
REV. 0.6, AUG. 20, 2003
70
60
70
30
30
0
0
0
0
0
0
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns