mc33910bac/r2 Freescale Semiconductor, Inc, mc33910bac/r2 Datasheet - Page 15

• Manufacturer Part Number: mc33910bac/r2
• Description: Lin System Basis Chip With 2x60ma High Side Drivers
• Manufacturer: Freescale Semiconductor, Inc

Table 4. Dynamic Electrical Characteristics (continued)
34910, unless otherwise noted. Typical values noted reflect the approximate parameter mean at T
conditions, unless otherwise noted.
Analog Integrated Circuit Device Data
Freescale Semiconductor
LIN PHYSICAL LAYER: DRIVER CHARACTERISTICS FOR FAST SLEW RATE
LIN PHYSICAL LAYER: CHARACTERISTICS AND WAKE-UP TIMINGS
PULSE WIDTH MODULATION INPUT PIN (PWMIN)
Notes
LIN Fast Slew Rate (Programming Mode)
Propagation Delay and Symmetry
Bus Wake-up Deglitcher (Sleep and Stop Modes)
Bus Wake-up Event Reported
TXD Permanent Dominant State Delay
PWMIN pin
45.
46.
47.
48.
49.
50.
Characteristics noted under conditions 5.5V ≤ V
Propagation Delay Receiver, t
Symmetry of Receiver Propagation Delay t
From Sleep Mode
From Stop Mode
Max. frequency to drive HS output pins
V
signal to LIN signal threshold defined at each parameter. See
See
See
The measurement is done with 1µF capacitor and 0mA current load on V
capacitor. The delay is measured between the bus wake-up threshold (V
See
In Stop Mode, the delay is measured between the bus wake-up threshold (V
page 18.
This parameter is guaranteed by process monitoring but, not production tested.
SUP
Figure
Figure
Figure
(50)
from 7.0V to 18V, bus load R
9, page
10, page
10, page 18. The delay depends of the load and capacitor on V
(49)
(48)
18
18
Characteristic
for Sleep and
REC_PD
(46)
=max (t
BUS
Figure
and C
REC_PDF
REC_PDR
(47)
BUS
11, page
- t
SUP
1.0nF / 1.0kΩ, 6.8nF / 660Ω, 10 nF / 500Ω. Measurement thresholds: 50% of TXD
, t
REC_PDR
REC_PDF
≤ 18V, -40°C ≤ T
19
for Stop Mode.
)
Figure
(45)
6, page 17.
BUSWU
A
DD
t
t
t
t
Symbol
REC_SYM
SR
≤ 125°C for the 33910 and -40°C ≤ T
PROPWL
TXDDOM
DD
REC_PD
f
t
t
. The value takes into account the delay to charge the
BUSWU
PWMIN
WAKE
WAKE
.
FAST
) rising edge of the LIN bus and when V
) and the falling edge of the
DYNAMIC ELECTRICAL CHARACTERISTICS
0.65
- 2.0
Min
9.0
42
—
—
—
ELECTRICAL CHARACTERISTICS
Typ
A
3.0
1.0
20
70
13
10
—
—
= 25°C under nominal
IRQ
1500
Max
1.35
6.0
2.0
pin. See
95
17
—
A
DD
≤ 85°C for the
reaches 3.0 V.
Figure
V / µs
Unit
kHz
µs
µs
µs
s
33910
11,
15