mc33789 Freescale Semiconductor, Inc, mc33789 Datasheet - Page 16

• Manufacturer Part Number: mc33789
• Description: Airbag System Basis Chip Sbc With Power Supply And Psi5 Sensor Interface
• Manufacturer: Freescale Semiconductor, Inc

ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 4. Static Electrical Characteristics (continued)
Typical values noted reflect the approximate parameter means at T
16
33789
LIN TRANSCEIVER PHYSICAL LAYER
Notes
Operating Voltage Range
Operating Supply Voltage Range
Supply Voltage Range (within which the device is not destroyed)
Current Limitation for Driver Dominant State
Input Leakage Current at the Receiver
Leakage Output Current to GND
Control Unit Disconnected from Ground
V
Receiver Dominant State
Receiver Recessive State
Receiver Threshold Center
Receiver Threshold Hysteresis
Voltage Drop at the Serial Diode in Pull-up Path
V
GND_SHIFT
LIN Under-voltage Threshold (positive and negative)
LIN Under-voltage Hysteresis (V
LIN Wake-up Threshold from Sleep Mode
LIN Pull-up Resistor to V
10.
11.
12.
13.
14.
Characteristics noted under conditions 7.0 V ≤ V
BAT
BAT
Driver ON, V
Driver off; V
Driver Off; 8.0 V
V
GND
(V
(V
BUS
_SHIFT
TH_DOM
TH_REC
Disconnected; V
Voltage range at the battery level, including the reverse battery diode.
Loss of local ground must not affect communication in the residual network.
In this LIN Physical Layer EC section, use VSUP to represent VPWR and use VBUS to represent VLIN, in order to be consistent with
the LIN Protocol Specification, and other Freescale LIN product specifications.
Node has to sustain the current that can flow under this condition. The bus must remain operational under this condition.
Guaranteed by design.
DEVICE
≥
V
SUP
- V
+ V
BUS =
= V
BUS
TH_DOM
TH_REC
SUP
<
= 18 V
0 V; V
V
SUP_DEVICE
; V
BAT
)
)/2
SUP
BAT
(10)
BAT =
<
Characteristic
18 V; 8.0 V
= 12 V; 0 < V
UVL
12 V
= GND; 0 V < V
- V
UVH
(11)
(14),(12)
<
BUS
)
V
BUS
< 18 V
<
BUS
18 V; V
< 18 V
SUP
BUS
(8)
(13)
≤ 18 V, - 40 °C ≤ T
≥
V
BAT
;
A =
I
V
I
I
BUS_PAS_DOM
BUS_PAS_REC
BUS_NO_GND
I
V
V
V
SUP_NON_OP
V
BUSNO_BAT
V
25°C under nominal conditions unless otherwise noted.
V
V
SHIFT_GND
V
UVL
Symbol
I
SHIFT_BAT
V
SERDIODE
R
BUS_LIM
BUS_CNT
BUSDOM
BUSREC
UVHYST
V
V
V
BUSWU
SLAVE
SUP
HYS
BAT
, V
A
UVH
≤ 125 °C, GND = 0 V unless otherwise noted.
0.475
Min
-0.3
-1.0
-1.0
8.0
7.0
0.6
0.4
5.9
40
20
–
–
–
–
0
0
–
–
Analog Integrated Circuit Device Data
Typ
100
0.5
4.3
90
40
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Freescale Semiconductor
11.5%
11.5%
0.525
0.175
Max
200
100
1.0
0.4
1.0
6.7
5.0
18
18
40
20
60
–
–
–
V
V
V
V
V
V
Unit
mA
mA
mA
mV
µA
µA
kΩ
SUP
SUP
SUP
SUP
BAT
BAT
V
V
V
V
V
V