mf1011b900y NXP Semiconductors, mf1011b900y Datasheet - Page 4

• Manufacturer Part Number: mf1011b900y
• Description: Microwave Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Notes
1. See “Mounting recommendations in the General part of handbook SC19a” .
2. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
T
APPLICATION INFORMATION
Microwave performance up to T
1997 Feb 18
R
R
Z
I
I
I
V
V
OPERATION
mb
CBO
CES
EBO
th
(BR)CBO
(BR)CES
th j-mb
th mb-h
MODE OF
Microwave power transistor
SYMBOL
SYMBOL
Class C
= 25 C unless otherwise specified.
thermal resistance from junction to mounting base T
thermal resistance from mounting base to heatsink note 1
thermal impedance from junction to heatsink
collector cut-off current
collector cut-off current
emitter cut-off current
collector-base breakdown voltage
collector-emitter breakdown voltage
t
t
t
t
p
p
p
p
= 10 s;
= 0.5 s; = 50%
= 112 s; = 1%
= 32 s;
CONDITIONS
= 1%
= 1%
PARAMETER
mb
PARAMETER
= 25 C in a common-base test circuit as shown in Fig.3.
1.03 to 1.09
(GHz)
1.09
1.09
f
4
I
V
I
I
I
E
C
C
C
BE
= 0; V
= 0; V
= 180 mA
= 180 mA; V
V
= 0; V
(V)
50
50
50
t
notes 1and 2
CC
p
CONDITIONS
j
CONDITIONS
= 10 s; = 1%;
= 120 C
CB
EB
CE
= 50 V
= 1.5 V
= 50 V
BE
typ. 900
typ. 750
typ. 870
= 0
(W)
P
800
L
27
27
7
65
65
MAX.
MF1011B900Y
typ. 6.5
typ. 5.7
typ. 6.3
0.84
0.01
0.2
MAX.
(dB)
G
6
Product specification
p
mA
mA
mA
V
V
typ. 48
typ. 36
typ. 46
UNIT
UNIT
K/W
K/W
K/W
(%)
40
C